参数资料
型号: 64432113AA
厂商: Vishay Semiconductors
文件页数: 3/10页
文件大小: 0K
描述: MT;KB SERIES BARRIER
标准包装: 1
系列: MT
连接器类型: 插口至插头
位置数: 2
行数: 1
长度: 1.15'(350.00mm)
颜色: 多色,单独
屏蔽: 无屏蔽
其它名称: *64432113AA
54-94-104MT..KB Series
Bulletin I27504 08/97
Blocking
Parameter
54MT.KB 94MT.KB 104MT.KB Units Conditions
V INS
RMS isolation voltage
4000
V
T J = 25 o C all terminal shorted
f = 50Hz, t = 1s
dv/dt Max. critical rate of rise
of off-state voltage (*)
500
V/μs
T J = T J max., linear to 0.67 V DRM ,
gate open circuit
(*) Available with dv/dt = 1000V/μs, to complete code add S90 i.e. 104MT160KBS90.
Triggering
Parameter
54MT.KB 94MT.KB 104MT.KB Units Conditions
P GM
Max. peak gate power
10
W
T J = T J max.
P G(AV) Max. average gate power
2.5
I GM
-V GT
Max. peak gate current
Max. peak negative
2.5
10
A
V
gate voltage
V GT
Max. required DC gate
voltage to trigger
4.0
2.5
V
T J = - 40°C Anode supply = 6V, resistive load
T J = 25°C
1.7
T J = 125°C
I GT
Max. required DC gate
270
T J = - 40°C Anode supply = 6V, resistive load
current to trigger
150
80
mA
T J = 25°C
T J = 125°C
V GD
Max. gate voltage
0.25
V
@ T J = T J max., rated V DRM applied
that will not trigger
I GD
Max. gate current
6
mA
that will not trigger
Thermal and Mechanical Specifications
Parameter
54MT.KB 94MT.KB 104MT.KB Units Conditions
T J
Max. junction operating
-40 to 125
°C
temperature range
T stg
Max. storage temperature
-40 to 125
°C
range
R thJC
Max. thermal resistance,
junction to case
0.52
1.05
0.39
0.77
0.34
0.69
K/W
DC operation per single AC switch
DC operation per junction
R thCS Max. thermal resistance,
case to heatsink
0.56
1.12
0.40
0.80
0.03
0.36
0.72
K/W
180° Sine cond. angle per single AC switch
180° Sine cond. angle per junction
Per module
Mounting surface smooth, flat and greased
T
Mounting
torque ± 10%
to heatsink
to terminal
4 to 6
3 to 4
Nm
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
wt
Approximate weight
225
g
Lubricated threads.
www.irf.com
3
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