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参数资料
| 型号： | 6A10 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 整流器 |
| 英文描述： | 6 A, 1000 V, SILICON, RECTIFIER DIODE |
| 封装： | R-6, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 38K |
| 代理商： | 6A10 |
21201 Itasca St.
Chatsworth, CA 91311
Phone: (818) 701-4933
Fax:
(818) 701-4939
6A05
thru
6A10
6 Amp Rectifier
50 - 1000 Volts
R-6
Features
Low Cost
Low Forward Voltage Drop
High Current Capability
High Surge Current Capability
Low Leakage
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.340
.360
8.60
9.10
B
.340
.360
8.60
9.10
C
.048
.052
1.20
1.30
D
1.000
---
25.40
---
Maximum Ratings
Operating Temperature: -65
°C to +175°C
Storage Temperature: -65
°C to +175°C
Maximum Thermal Resistance; 10
°C/W Junction To Ambient
Microsemi
Part Number
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS Voltage
Maximum DC
Blocking
Voltage
6A05
50V
35V
50V
6A1
100V
70V
100V
6A2
200V
140V
200V
6A4
400V
280V
400V
6A6
600V
420V
600V
6A8
800V
560V
800V
6A10
1000V
700V
1000V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
6.0A
TA = 60
°C
Peak Forward Surge
Current
IFSM
400A
8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
VF
0.95V
IFM = 6.0A;
TJ = 25
°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
10
A
100
A
TJ = 25
°C
TJ = 100
°C
Typical Junction
Capacitance
CJ
150pF
Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300
sec, Duty cycle 1%
A
B
D
C
Cathode
Mark
相关PDF资料 |
PDF描述 |
|---|---|
| 6A6 | 6 A, 600 V, SILICON, RECTIFIER DIODE |
| 6A05 | 6 A, 50 V, SILICON, RECTIFIER DIODE |
| 6A2 | 6 A, 200 V, SILICON, RECTIFIER DIODE |
| 1N4001G | 1 A, SILICON, SIGNAL DIODE, DO-41 |
| 1N4003G | 1 A, SILICON, SIGNAL DIODE, DO-41 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 6A-10 | 制造商:Aeroflex / Inmet 功能描述:ATTENUATOR - FIXED COAXIAL |
| 6A10 R0 | 制造商:SKMI/Taiwan 功能描述:Diode 50V 6A 2-Pin Case R-6 T/R |
| 6A-10.0TRI-BK-100R | 制造商:Permanoid 功能描述:80/0.4 8AWG BLACK |
| 6A-10.0TRI-GNYW-100R | 制造商:Permanoid 功能描述:80/0.4 8AWG GRN/YELLOW |
| 6A-10.0TRI-RD-100R | 制造商:Permanoid 功能描述:80/0.4 8AWG RED |
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