参数资料
型号: 6CWT04FNTRL
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 整流器
英文描述: 45 V, SILICON, RECTIFIER DIODE, TO-252AA
封装: ROHS COMPLIANT, DPAK-3
文件页数: 4/7页
文件大小: 99K
代理商: 6CWT04FNTRL
www.vishay.com
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94650
4
Revision: 10-Dec-08
6CUT04, 6CWT04FN
Vishay High Power Products
High Performance
Schottky Generation 5.0, 2 x 3 A
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
AverageForwardCurrent-IF
(AV)(A)
Allowable
Case
Temperature
(°C)
0
1
2
3
4
5
145
150
155
160
165
170
175
180
DC
Square wave (D=0.50)
80% rated Vr applied
see note (1)
AverageForwardCurrent-IF
(AV) (A)
Average
Power
Loss
-(Watts)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
0.5
1
1.5
2
2.5
d=1/2
d=1/3
DC
RMS Limit
d=1/4
d=1/5
d=3/4
SquareWavePulseDuration-t
p (microsec)
Non-Repetitive
Surge
Current
-I
FSM
(A)
10
100
1000
10000
10
100
1000
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