- 您现在的位置：买卖IC网 > PDF目录97836 > 6F100MS02 (VISHAY INTERTECHNOLOGY INC) 6 A, 1000 V, SILICON, RECTIFIER DIODE, DO-203AA PDF资料下载
参数资料
| 型号： | 6F100MS02 |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 6 A, 1000 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 封装： | DO-4, 1 PIN |
| 文件页数： | 5/11页 |
| 文件大小： | 2025K |
| 代理商： | 6F100MS02 |
Document Number: 93138
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 26-Sep-08
3
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Fast Recovery Diodes
(Stud Version), 6/12/16 A
Vishay High Power Products
Note
(1) JEDEC registered values
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
1N3879.
1N3883.
1N3889.
1N3893.
6FL..
12FL..
16FL..
UNITS
S02
S05
Maximum reverse
recovery time
trr
TJ = 25 °C, IF = 1 A to VR = 30 V,
dIF/dt = 100 A/s
150
-
ns
TJ = 25 °C, dIF/dt = 25 A/s,
IFM = π x rated IF(AV)
300 (1)
200
500
Maximum peak
recovery current
IRM(REC)
IFM = π x rated IF(AV)
4 (1)
5 (1)
--
Maximum reverse
recovery charge
Qrr
TJ = 25 °C, IF = 1 A to VR = 30 V,
dIF/dt = 100 A/s
400
350
-
nC
TJ = 25 °C, dIF/dt = 25 A/s,
IFM = π x rated IF(AV)
400
-
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
1N3879.
1N3883.
6FL..
1N3889.
1N3893.
12FL..
16FL..
UNITS
Maximum junction operating
temperature range
TJ
- 65 to 150
°C
Maximum storage temperature range
TStg
- 65 to 175
Maximum thermal resistance,
junction to case
RthJC
DC operation
2.5
2.0
1.6
°C/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth,
flat and greased
0.5
Allowable mounting torque
Not lubricated threads
1.5 + 0 - 10 %
(13)
N m
(lbf in)
Lubricated threads
1.2 + 0 - 10 %
(10)
Approximate weight
7g
0.25
oz.
Case style
JEDEC
DO-203AA (DO-4)
相关PDF资料 |
PDF描述 |
|---|---|
| 6F100MS05 | 6 A, 1000 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 6F40MS02 | 6 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 6F40S02 | 6 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 6F40S05 | 6 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 6F5MS02 | 6 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 6F10B | 制造商:Olympic Controls Corporation 功能描述: |
| 6F10M | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Standard Recovery Diodes (Stud Version), 6 A |
| 6F10T | 制造商:Olympic Controls Corporation 功能描述: |
| 6F12 | 制造商:IRF 制造商全称:International Rectifier 功能描述:STANDARD RECOVERY DIODES |
| 6F120 | 功能描述:DIODE STD REC 200V 6A DO-4 RoHS:是 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
发布紧急采购，3分钟左右您将得到回复。