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参数资料
| 型号： | 6F120 |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 6 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 封装： | ROHS COMPLIANT, DO-4, 1 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 135K |
| 代理商： | 6F120 |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93519
4
Revision: 29-Sep-08
6F(R) Series
Vishay High Power Products Standard Recovery Diodes
(Stud Version), 6 A
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
0
255075
100
Maximum Allowable Ambient Temperature (°C)
20
K/W
30 K
/W
40 K/W
50 K/W
R
=
15
K/W
- D
elta
R
10
K/W
th
SA
0
1
2
3
4
5
6
7
8
0246
8
10
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RMS Limit
Ma
xi
m
u
m
A
v
er
ag
e
F
o
rw
ar
d
P
o
w
e
rLos
s
(W
)
Conduction Period
6F(R) Series
T = 175°C
J
40
50
60
70
80
90
100
110
120
130
140
150
110
100
Pe
a
k
H
a
lf
Si
n
e
W
a
v
e
F
o
rw
ar
d
C
u
rr
ent
(
A
)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Initial T = 175°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
6F(R) Series
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
J
30
40
50
60
70
80
90
100
110
120
130
140
150
160
0.01
0.1
1
Pe
a
kH
a
lf
Si
n
e
W
a
v
e
F
o
rw
ar
d
C
u
rr
e
n
t(A
)
Pulse Train Duration (s)
6F(R) Series
Initial T = 175°C
No Voltage Reapplied
Rated V
Reapplied
Versus Pulse Train Duration.
Maximum Non Repetitive Surge Current
RRM
J
1
10
100
1000
00.5
11.5
22.5
T = 25°C
J
In
s
ta
n
ta
n
e
o
u
s
F
o
rw
ar
d
C
u
rre
n
t(A
)
Instantaneous Forward Voltage (V)
6F(R) Series
T = 175°C
J
0.1
1
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
th
J
C
T
ran
si
e
n
tT
h
er
m
a
l
Im
p
e
d
a
nc
e
Z
(K
/W
)
6F(R) Series
Steady State Value
R
= 2.5 K/W
(DC Operation)
thJC
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PDF描述 |
|---|---|
| 6FR120M | 6 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 6FR120 | 6 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 6FL100S05 | 6 A, 1000 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 12FL60S02 | 12 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 12FLR20S02 | 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 6F-120 | 制造商:TRSYS 制造商全称:Transys Electronics 功能描述:STANDARD RECOVERY DIODE |
| 6F-1201-02 | 制造商:INDUSTRIAL WIRE 功能描述:THHN INDUSTRIAL WIRE |
| 6F120M | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Standard Recovery Diodes (Stud Version), 6 A |
| 6F140 | 制造商:NAINA 制造商全称:Naina Semiconductor ltd. 功能描述:Standard Recovery Diodes (Stud Version) |
| 6F-1401-06 | 制造商:AIW 功能描述:14-1C THHN/THWN SOL BC 90C 600V BLU |
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