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参数资料
| 型号： | 6F40MS02 |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 6 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 封装： | DO-4, 1 PIN |
| 文件页数： | 5/11页 |
| 文件大小： | 2025K |
| 代理商： | 6F40MS02 |
Document Number: 93138
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 26-Sep-08
3
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Fast Recovery Diodes
(Stud Version), 6/12/16 A
Vishay High Power Products
Note
(1) JEDEC registered values
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
1N3879.
1N3883.
1N3889.
1N3893.
6FL..
12FL..
16FL..
UNITS
S02
S05
Maximum reverse
recovery time
trr
TJ = 25 °C, IF = 1 A to VR = 30 V,
dIF/dt = 100 A/s
150
-
ns
TJ = 25 °C, dIF/dt = 25 A/s,
IFM = π x rated IF(AV)
300 (1)
200
500
Maximum peak
recovery current
IRM(REC)
IFM = π x rated IF(AV)
4 (1)
5 (1)
--
Maximum reverse
recovery charge
Qrr
TJ = 25 °C, IF = 1 A to VR = 30 V,
dIF/dt = 100 A/s
400
350
-
nC
TJ = 25 °C, dIF/dt = 25 A/s,
IFM = π x rated IF(AV)
400
-
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
1N3879.
1N3883.
6FL..
1N3889.
1N3893.
12FL..
16FL..
UNITS
Maximum junction operating
temperature range
TJ
- 65 to 150
°C
Maximum storage temperature range
TStg
- 65 to 175
Maximum thermal resistance,
junction to case
RthJC
DC operation
2.5
2.0
1.6
°C/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth,
flat and greased
0.5
Allowable mounting torque
Not lubricated threads
1.5 + 0 - 10 %
(13)
N m
(lbf in)
Lubricated threads
1.2 + 0 - 10 %
(10)
Approximate weight
7g
0.25
oz.
Case style
JEDEC
DO-203AA (DO-4)
相关PDF资料 |
PDF描述 |
|---|---|
| 6F40S02 | 6 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 6F40S05 | 6 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 6F5MS02 | 6 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 6F60MS05 | 6 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 6F80MS02 | 6 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AA |
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