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参数资料
| 型号： | 6F80MPBF |
| 元件分类： | 整流器 |
| 英文描述： | 6 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 文件页数： | 3/6页 |
| 文件大小： | 72K |
| 代理商： | 6F80MPBF |
6F(R) Series
3
Bulletin I20206 rev. A 09/98
www.irf.com
180°
0.34
0.29
T
J
= T
J
max.
120°
0.44
0.48
90°
0.57
0.63
60°
0.85
0.88
30°
1.37
1.39
Conduction angle
Sinusoidal conduction
Rectangular conduction Units
Conditions
K/W
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Ordering Information Table
1
23
4
5
Device Code
A6F
R
120
M
1
-
A
= Avalanche diode
None = Standard diode
2
-
Current rating: Code = I
F(AV)
3
-
F
= Standard device
4
-
None = Stud Normal Polarity (Cathode to Stud)
R
= Stud Reverse Polarity (Anode to Stud)
5
-
Voltage code: Code x 10 = V
RRM
(See Voltage Ratings table)
6
-
None = Stud base DO-203AA (DO-4) 10-32UNF-2A
M
= Stud base DO-203AA (DO-4) M5 X 0.8 - (Not available for Avalanche diodes)
6
Parameter
6F(R)
Units
Conditions
T
J
Max. junction operating temperature range
-65 to 175
T
stg
Max. storage temperature range
-65 to 200
R
thJC
Max. thermal resistance, junction to case
2.5
DC operation
R
thCS
Max. thermal resistance, case
Mounting surface, smooth, flat and
to heatsink
greased
T
Mounting torque, ± 10%
1.2
Nm
Lubricated threads
(1.5)
(Not lubricated threads)
wt
Approximate weight
7 (0.25)
g (oz)
Case style
DO-203AA (DO-4)
See Outline Table
°C
0.5
K/W
Thermal and Mechanical Specifications
相关PDF资料 |
PDF描述 |
|---|---|
| 6F100PBF | 6 A, 1000 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 6F120PBF | 6 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 6FR10PBF | 6 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 6FR60 | 6 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 6F120 | 6 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AA |
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