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参数资料
| 型号： | 6FR120 |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 6 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 封装： | ROHS COMPLIANT, DO-4, 1 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 135K |
| 代理商： | 6FR120 |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93519
2
Revision: 29-Sep-08
6F(R) Series
Vishay High Power Products Standard Recovery Diodes
(Stud Version), 6 A
Note
(1) Available only for avalanche version, all other parameters the same as 6F
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
6A
160
°C
Maximum RMS forward current
IF(RMS)
9.5
A
Maximum non-repetitive peak reverse power
PR (1)
10 s square pulse, TJ = TJ maximum
4
K/W
Maximum peak, one cycle forward,
non-repetitive surge current
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ =
TJ maximum
159
A
t = 8.3 ms
167
t = 10 ms
100 % VRRM
reapplied
134
t = 8.3 ms
141
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
127
A2s
t = 8.3 ms
116
t = 10 ms
100 % VRRM
reapplied
90
t = 8.3 ms
82
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
1270
A2
√s
Low level value of threshold voltage
VF(TO)1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ maximum
0.63
V
High level value of threshold voltage
VF(TO)2
(I >
π x I
F(AV)), TJ = TJ maximum
0.86
Low level value of forward slope resistance
rf1
(16.7 % x
π x I
F(AV) < I < π x IF(AV)), TJ = TJ maximum
15.7
m
Ω
High level value of forward slope resistance
rf2
(I >
π x I
F(AV)), TJ = TJ maximum
5.6
Maximum forward voltage drop
VFM
Ipk = 19 A, TJ = 25 °C, tp = 400 s rectangular wave
1.10
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction
temperature range
TJ
- 65 to 175
°C
Maximum storage
temperature range
TStg
- 65 to 200
Maximum thermal resistance,
junction to case
RthJC
DC operation
2.5
K/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.5
Mounting torque, ± 10 %
Lubricated threads
(Not lubricated threads)
1.2
(1.5)
N m
(lbf in)
Approximate weight
7g
0.25
oz.
Case style
See dimensions - link at the end of datasheet
DO-203AA (DO-4)
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PDF描述 |
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| 12FLR20S02 | 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AA |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 6FR-120 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:STANDARD RECOVERY DIODE |
| 6FR120M | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Standard Recovery Diodes (Stud Version), 6 A |
| 6FR140 | 制造商:NAINA 制造商全称:Naina Semiconductor ltd. 功能描述:Standard Recovery Diodes (Stud Version) |
| 6FR1-6 | 制造商:PEPPERL+FUCHS 功能描述:Switch, Proximity, Magnetic Actuator 制造商:PEPPERL+FUCHS 功能描述:PROXIMITY SWITCH MAGNETIC ACTUATOR, Sensor Housing:Rectangular 制造商:PEPPERL+FUCHS 功能描述:PROXIMITY SWITCH MAGNETIC ACTUATOR, Sensor Housing:Rectangular , RoHS Compliant: Yes |
| 6FR160 | 制造商:NAINA 制造商全称:Naina Semiconductor ltd. 功能描述:Standard Recovery Diodes (Stud Version) |
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