参数资料
型号: 6GBU08
元件分类: 桥式整流
英文描述: 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
文件页数: 1/5页
文件大小: 103K
代理商: 6GBU08
6.0 Amps Single Phase Full Wave
Bridge Rectifier
I
O(AV) = 6A
V
RRM = 50/ 800V
6GBU Series
1
Bulletin I2718 rev. E 05/02
www.irf.com
Features
Diode chips are glass passivated
Suitable for Universal hole mounting
Easy to assemble & install on P.C.B.
High Surge Current Capability
High Isolation between terminals and molded case (1500 V
RMS)
Lead free terminals solderable as per MIL-STD-750 Method 2026
Terminals suitable for high temperature soldering at 260°C for 8-10 secs
UL E160375 approved
Description
These GBU Series of Single Phase Bridges consist
of four glass passivated silicon junction connected
as a Full Wave Bridge. These four junctions are
encapsulated by plastic molding technique. These
Bridges are mainly used in Switch Mode power
supply and in industrial and consumer equipment.
Parameters
6GBU
Units
Major Ratings and Characteristics
I
O
6A
@ T
C
100
°C
I
FSM
@50Hz
175
A
@60Hz
182
A
I2t
@50Hz
154
A2s
@60Hz
138
A2s
VRRM
range
50 to 800
V
T
J
- 55 to 150
oC
6GBU
PART OBSOLETE - EOL18
相关PDF资料
PDF描述
6GBU005 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
6GBU01 6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
6GBU02 6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
6GBU12 6 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
6GBU1 6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
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