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参数资料
| 型号： | 71V3557SA75BGI8 |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | SRAM |
| 英文描述： | 128K X 36 ZBT SRAM, 7.5 ns, PBGA119 |
| 封装： | 14 X 22 MM, PLASTIC, BGA-119 |
| 文件页数： | 1/28页 |
| 文件大小： | 511K |
| 代理商： | 71V3557SA75BGI8 |
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MAY 2002
DSC-5282/06
1
2002 Integrated Device Technology, Inc.
128K x 36, 256K x 18,
3.3V Synchronous ZBT SRAMs
3.3V I/O, Burst Counter,
Flow-Through Outputs
Pin Description Summary
it read or write.
The IDT71V3557/59 contain address, data-in and control signal
registers. The outputs are flow-through (no output data register). Output
enable is the only asynchronous signal and can be used to disable the
outputs at any given time.
A Clock Enable (
CEN) pin allows operation of the IDT71V3557/59
to be suspended as long as necessary. All synchronous inputs are
ignored when (
CEN) is high and the internal device registers will hold
their previous values.
There are three chip enable pins (
CE1, CE2, CE2)thatallowtheuser
todeselectthedevicewhendesired.Ifanyoneofthesethreeisnotasserted
when ADV/
LD is low, no new memory operation can be
initiated. However, any pending data transfers (reads or writes) will
be completed. The data bus will tri-state one cycle after chip is de-
selected or a write is initiated.
The IDT71V3557/59 have an on-chip burst counter. In the burst
mode, the IDT71V3557/59 can provide four cycles of data for a single
address presented to the SRAM. The order of the burst sequence is
defined by the
LBO input pin. The LBO pin selects between linear and
interleaved burst sequence. The ADV/
LD signal is used to load a new
externaladdress(ADV/
LD=LOW)orincrementtheinternalburstcounter
(ADV/
LD = HIGH).
The IDT71V3557/59 SRAMs utilize IDT's latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and a 165 fine pitch ball grid array (fBGA).
Features
x
128K x 36, 256K x 18 memory configurations
x
Supports high performance system speed - 100 MHz
(7.5 ns Clock-to-Data Access)
x
ZBTTM Feature - No dead cycles between write and read
cycles
x
Internally synchronized output buffer enable eliminates
the need to control
OE
x
Single R/
W (READ/WRITE) control pin
x
4-word burst capability (Interleaved or linear)
x
Individual byte write (
BW1 - BW4) control (May tie active)
x
Three chip enables for simple depth expansion
x
3.3V power supply (±5%), 3.3V (±5%) I/O Supply (VDDQ)
x
Optional Boundary Scan JTAG Interface (IEEE 1149.1
complaint)
x
Packaged in a JEDEC Standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine
pitch ball grid array (fBGA)
Description
The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-
bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are
designed to eliminate dead bus cycles when turning the bus around
between reads and writes, or writes and reads. Thus they have been
given the name ZBTTM, or Zero Bus Turnaround.
AddressandcontrolsignalsareappliedtotheSRAMduringoneclock
cycle, and on the next clock cycle the associated data cycle occurs, be
A0-A17
Address Inputs
Input
Synchronous
CE1, CE2, CE2
Chip Enables
Input
Synchronous
OE
Output Enable
Input
Asynchronous
R/
W
Read/Write Signal
Input
Synchronous
CEN
Clock Enable
Input
Synchronous
BW1, BW2, BW3, BW4
Individual Byte Write Selects
Input
Synchronous
CLK
Clock
Input
N/A
ADV/
LD
Advance burst address / Load new address
Input
Synchronous
LBO
Linear / Interleaved Burst Order
Input
Static
TMS
Test Mode Select
Input
Synchronous
TDI
Test Data Input
Input
Synchronous
TCK
Test Clock
Input
N/A
TDO
Test Data Output
Output
Synchronous
TRST
JTAG Reset (Optional)
Input
Asynchronous
ZZ
Sleep Mode
Input
Synchronous
I/O0-I/O31, I/OP1-I/OP4
Data Input / Output
I/O
Synchronous
VDD, VDDQ
Core Power, I/O Power
Supply
Static
VSS
Ground
Supply
Static
5282 tbl 01
IDT71V3557S
IDT71V3559S
IDT71V3557SA
IDT71V3559SA
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