参数资料
型号: 74AHC1G1
厂商: NXP Semiconductors N.V.
英文描述: Inverting Schmitt trigger
中文描述: 反相施密特触发器
文件页数: 6/16页
文件大小: 74K
代理商: 74AHC1G1
2002 May 27
6
Philips Semiconductors
Product specification
2-input NAND gate
74AHC1G00; 74AHCT1G00
DC CHARACTERISTICS
Family 74AHC1G
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
TEST CONDITIONS
T
amb
(
°
C)
UNIT
OTHER
V
CC
(V)
25
-
40 to +85
-
40 to +125
MIN.
TYP.
2.0
MAX.
0.5
0.9
1.65
MIN.
MAX.
0.5
0.9
1.65
MIN.
MAX.
0.5
0.9
1.65
V
IH
HIGH-level input
voltage
2.0
3.0
5.5
2.0
3.0
5.5
2.0
1.5
2.1
3.85
1.9
1.5
2.1
3.85
1.9
1.5
2.1
3.85
1.9
V
V
V
V
V
V
V
V
IL
LOW-level input
voltage
V
OH
HIGH-leveloutput
voltage
V
I
= V
IH
or V
IL
;
I
O
=
50
μ
A
V
I
= V
IH
or V
IL
;
I
O
=
50
μ
A
V
I
= V
IH
or V
IL
;
I
O
=
50
μ
A
V
I
= V
IH
or V
IL
;
I
O
=
4.0 mA
V
I
= V
IH
or V
IL
;
I
O
=
8.0 mA
V
I
= V
IH
or V
IL
;
I
O
= 50
μ
A
V
I
= V
IH
or V
IL
;
I
O
= 50
μ
A
V
I
= V
IH
or V
IL
;
I
O
= 50
μ
A
V
I
= V
IH
or V
IL
;
I
O
= 4.0 mA
V
I
= V
IH
or V
IL
;
I
O
= 8.0 mA
V
I
= V
CC
or GND
3.0
2.9
3.0
2.9
2.9
V
4.5
4.4
4.5
4.4
4.4
V
3.0
2.58
2.48
2.40
V
4.5
3.94
3.8
3.70
V
V
OL
LOW-level output
voltage
2.0
0
0.1
0.1
0.1
V
3.0
0
0.1
0.1
0.1
V
4.5
0
0.1
0.1
0.1
V
3.0
0.36
0.44
0.55
V
4.5
0.36
0.44
0.55
V
I
LI
input leakage
current
quiescent supply
current
input capacitance
5.5
0.1
1.0
2.0
μ
A
I
CC
V
I
= V
CC
or GND;
I
O
= 0
5.5
1.0
10
40
μ
A
C
I
1.5
10
10
10
pF
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