参数资料
型号: 74AHC1G79
厂商: NXP Semiconductors N.V.
英文描述: Quad 2-Input Positive-NAND Gates 14-SO -40 to 85
中文描述: 单D型触发器;积极边缘触发
文件页数: 5/16页
文件大小: 74K
代理商: 74AHC1G79
2002 May 27
5
Philips Semiconductors
Product specification
2-input NAND gate
74AHC1G00; 74AHCT1G00
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Note
1.
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
SYMBOL
PARAMETER
CONDITIONS
74AHC1G
74AHCT1G
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
V
I
V
O
T
amb
supply voltage
input voltage
output voltage
operating ambient
temperature
input rise and fall
times
2.0
0
0
40
5.0
+25
5.5
5.5
V
CC
+125
4.5
0
0
40
5.0
+25
5.5
5.5
V
CC
+125
V
V
V
°
C
see DC and AC
characteristics per device
V
CC
= 3.3
±
0.3 V
V
CC
= 5
±
0.5 V
t
r
, t
f
(
t/
f)
100
20
20
ns/V
ns/V
SYMBOL
PARAMETER
CONDITIONS
MIN.
0.5
0.5
65
MAX.
UNIT
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
supply voltage
input voltage
input diode current
output diode current
output source or sink current
V
CC
or GND current
storage temperature
power dissipation per package
+7.0
+7.0
20
±
20
±
25
±
75
+150
250
V
V
mA
mA
mA
mA
°
C
mW
V
I
<
0.5 V
V
O
<
0.5 V or V
O
> V
CC
+ 0.5 V; note 1
0.5 V < V
O
< V
CC
+ 0.5 V
for temperature range from
40 to +125
°
C
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