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参数资料
| 型号： | 74AHC3G04 |
| 厂商： | NXP Semiconductors N.V. |
| 英文描述： | INVERTER |
| 中文描述： | 反相器 |
| 文件页数： | 1/17页 |
| 文件大小： | 97K |
| 代理商： | 74AHC3G04 |
1.
General description
The 74AHC3GU04 is a high-speed Si-gate CMOS device. This device provides the
inverting single stage function.
2.
Features
I
Symmetrical output impedance
I
High noise immunity
I
ESD protection:
N
HBM EIA/JESD22-A114-A exceeds 2000 V
N
MM EIA/JESD22-A115-A exceeds 200 V
N
CDM EIA/JESD22-C101 exceeds 1000 V.
I
Low power dissipation
I
Balanced propagation delays
I
SOT505-2 and SOT765-1 package
I
Output capability
±
8 mA drive
I
Specified from
40
°
C to +85
°
C and from
40
°
C to +125
°
C.
3.
Quick reference data
[1]
C
PD
is used to determine the dynamic power dissipation (P
D
in
μ
W).
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
Σ
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total load switching outputs;
Σ
(C
L
×
V
CC2
×
f
o
) = sum of the outputs.
The condition is V
I
= GND to V
CC
.
[2]
74AHC3GU04
Inverter
Rev. 01 — 5 March 2004
Product data sheet
Table 1:
GND = 0 V; T
amb
= 25
°
C; t
r
= t
f
≤
3.0 ns.
Symbol
Parameter
t
PHL
, t
PLH
propagation delay nA to nY V
CC
= 5 V;
Quick reference data
Conditions
Min
-
Typ
2.5
Max
5.5
Unit
ns
C
L
= 15 pF
C
I
C
PD
input capacitance
power dissipation
capacitance
-
-
3.0
4
10
-
pF
pF
[1]
[2]
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