参数资料
型号: 74AHCT1G04GW,165
厂商: NXP Semiconductors
文件页数: 7/11页
文件大小: 0K
描述: IC INVERTER SC88A-5
产品培训模块: Logic Packages
标准包装: 10,000
系列: 74AHCT
逻辑类型: 逆变器,缓冲器
电路数: 1
输入数: 1
电源电压: 4.5 V ~ 5.5 V
电流 - 静态(最大值): 1µA
输出电流高,低: 8mA,8mA
逻辑电平 - 低: 0.8V
逻辑电平 - 高: 2V
额定电压和最大 CL 时的最大传播延迟: 7.7ns @ 4.5V ~ 5.5V,50pF
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
供应商设备封装: 5-TSSOP
封装/外壳: 6-TSSOP(5 引线),SC-88A,SOT-353
包装: 带卷 (TR)
74AHC_AHCT1G04_7
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 31 May 2007
5 of 11
NXP Semiconductors
74AHC1G04; 74AHCT1G04
Inverter
11. Dynamic characteristics
[1]
tpd is the same as tPLH and tPHL.
[2]
Typical values are measured at VCC = 3.3 V.
[3]
Typical values are measured at VCC = 5.0 V.
[4]
CPD is used to determine the dynamic power dissipation PD (W).
PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz; fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
Σ(C
L × VCC
2
× f
o) = sum of outputs.
ICC
supply current VI =VCC or GND; IO = 0 A;
VCC = 5.5 V
-
1.0
-
10
-
40
A
ICC
additional
supply current
per input pin; VI = 3.4 V;
other inputs at VCC or GND;
IO = 0 A; VCC = 5.5 V
-
1.35
-
1.5
-
1.5
mA
CI
input
capacitance
-
1.5
10
-
10
-
10
pF
Table 7.
Static characteristics …continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
25
°C
40 °C to +85 °C 40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
Min
Max
Table 8.
Dynamic characteristics
GND = 0 V; tr = tf = ≤ 3.0 ns. For test circuit see Figure 6.
Symbol
Parameter
Conditions
25
°C
40 °C to +85 °C 40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
Min
Max
For type 74AHC1G04
tpd
propagation
delay
A to Y; see Figure 5
VCC = 3.0 V to 3.6 V
CL = 15 pF
-
4.3
7.1
1.0
8.5
1.0
11.0
ns
CL = 50 pF
-
6.1
10.6
1.0
12
1.0
14.5
ns
VCC = 4.5 V to 5.5 V
CL = 15 pF
-
3.1
5.5
1.0
6.5
1.0
7.0
ns
CL = 50 pF
-
4.5
7.5
1.0
8.5
1.0
9.5
ns
CPD
power
dissipation
capacitance
per buffer;
CL = 50 pF; f = 1 MHz;
VI = GND to VCC
-15-
-
pF
For type 74AHCT1G04
tpd
propagation
delay
A to Y; see Figure 5
VCC = 4.5 V to 5.5 V
CL = 15 pF
-
3.4
6.7
1.0
7.5
1.0
8.5
ns
CL = 50 pF
-
4.9
7.7
1.0
8.5
1.0
10.0
ns
CPD
power
dissipation
capacitance
per buffer;
CL = 50 pF; f = 1 MHz;
VI = GND to VCC
-16-
-
pF
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