参数资料
型号: 74ALVT16241
厂商: NXP Semiconductors N.V.
英文描述: 2.5V/3.3V ALVT 16-bit buffer/driver(3-State)(2.5V/3.3V ALVT 16位缓冲器/驱动器(三态))
中文描述: 2.5V/3.3V的ALVT 16位缓冲器/驱动器(3态)(2.5V/3.3V的ALVT 16位缓冲器/驱动器(三态))
文件页数: 4/10页
文件大小: 84K
代理商: 74ALVT16241
Philips Semiconductors
Product specification
74ALVT16241
2.5V/3.3V 16-bit buffer/driver (3-State)
1998 Feb 13
4
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL
V
CC
DC supply voltage
I
IK
DC input diode current
V
I
DC input voltage
3
I
OK
DC output diode current
V
OUT
DC output voltage
3
PARAMETER
CONDITIONS
RATING
-0.5 to +4.6
-50
-0.5 to +7.0
-50
-0.5 to +7.0
128
-64
-65 to +150
UNIT
V
mA
V
mA
V
V
I
< 0
V
O
< 0
Output in Off or High state
Output in Low state
Output in High state
I
OUT
DC output current
DC out ut current
mA
T
stg
Storage temperature range
°
C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
°
C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
2.5V RANGE LIMITS
MIN
2.3
0
1.7
3.3V RANGE LIMITS
MIN
3.0
0
2.0
UNIT
MAX
2.7
5.5
MAX
3.6
5.5
V
CC
V
I
V
IH
V
IL
I
OH
DC supply voltage
Input voltage
High-level input voltage
Input voltage
High-level output current
Low-level output current
Low-level output current; current duty cycle
50%; f
1kHz
Input transition rise or fall rate; Outputs enabled
Operating free-air temperature range
V
V
V
V
0.7
–8
8
24
10
+85
0.8
–32
32
64
10
+85
mA
I
OL
mA
t/
v
T
amb
ns/V
°
C
–40
–40
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