参数资料
型号: 74ALVT16244
厂商: NXP Semiconductors N.V.
英文描述: 2.5V/3.3V ALVT 16-bit buffer/driver(3-State)(2.5V/3.3V ALVT 16位缓冲器/驱动器(三态))
中文描述: 2.5V/3.3V的ALVT 16位缓冲器/驱动器(3态)(2.5V/3.3V的ALVT 16位缓冲器/驱动器(三态))
文件页数: 3/10页
文件大小: 84K
代理商: 74ALVT16244
Philips Semiconductors
Product specification
74ALVT16244
2.5V/3.3V 16-bit buffer/driver (3-State)
1998 Oct 07
3
PIN CONFIGURATION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1OE
1Y0
1Y1
GND
1Y2
1Y3
2Y0
2Y1
GND
2Y2
2Y3
3Y0
3Y1
GND
3Y4
V
CC
4Y0
V
CC
3Y2
4Y1
GND
4Y3
4OE
4Y2
2OE
1A0
1A1
GND
1A2
1A3
2A0
2A1
GND
2A2
2A3
3A0
3A1
GND
3A3
V
CC
4A0
V
CC
3A2
4A1
GND
4A3
3OE
4A2
SA00013
PIN DESCRIPTION
PIN NUMBER
SYMBOL
NAME AND FUNCTION
47, 46, 44, 43
41, 40, 38, 37
36, 35, 33, 32
30, 29, 27, 26
1A0 - 1A3,
2A0 - 2A3,
3A0 - 3A3,
4A0 - 4A3
Data inputs
2, 3, 5, 6
8, 9, 11, 12
13, 14, 16, 17
19, 20, 22, 23
1Y0 - 1Y3,
2Y0 - 2Y3,
3Y0 - 3Y3,
4Y0 - 4Y3
Data outputs
1, 48
25, 24
1OE, 2OE,
3OE, 4OE
Output enables
4, 10, 15, 21
28, 34, 39, 45
GND
Ground (0V)
7, 18, 31, 42
V
CC
Positive supply voltage
FUNCTION TABLE
INPUTS
OUTPUTS
nOE
nAx
nYx
L
L
L
L
H
H
H
X
Z
H = High voltage level
L
= Low voltage level
X = Don’t care
Z = High Impedance “off” state
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL
V
CC
DC supply voltage
I
IK
DC input diode current
V
I
DC input voltage
3
I
OK
DC output diode current
V
OUT
DC output voltage
3
PARAMETER
CONDITIONS
RATING
-0.5 to +4.6
-50
-0.5 to +7.0
-50
-0.5 to +7.0
128
-64
-65 to +150
UNIT
V
mA
V
mA
V
V
I
< 0
V
O
< 0
Output in Off or High state
Output in Low state
Output in High state
I
OUT
DC output current
DC out ut current
mA
T
stg
Storage temperature range
°
C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
°
C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
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