参数资料
型号: 74ALVT16245
厂商: NXP Semiconductors N.V.
英文描述: 2.5V/3.3V ALVT 16-bit transceiver(3-State)(2.5V/3.3V ALVT 16位收发器(三态))
中文描述: 2.5V/3.3V的ALVT 16位收发器(3态)(2.5V/3.3V的ALVT 16位收发器(三态))
文件页数: 3/12页
文件大小: 95K
代理商: 74ALVT16245
Philips Semiconductors
Product specification
74ALVT16245
2.5V/3.3V 16-bit transceiver (3-State)
1998 Feb 13
3
PIN CONFIGURATION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1DIR
1B0
1B1
GND
1B2
1B3
1B4
1B5
GND
1B6
1B7
2B0
2B1
GND
2B3
V
CC
2B4
V
CC
2B2
2B5
GND
2B7
2DIR
2B6
1OE
1A0
1A1
GND
1A2
1A3
1A4
1A5
GND
1A6
1A7
2A0
2A1
GND
2A3
V
CC
2A4
V
CC
2A2
2A5
GND
2A7
2OE
2A6
SA00020
PIN DESCRIPTION
PIN NUMBER
SYMBOL
NAME AND FUNCTION
1, 24
nDIR
Direction control input
47, 46, 44, 43,
41, 40, 38, 37,
36, 35, 33, 32,
30, 29, 27, 26
nA0 – nA7
Data inputs/outputs (A side)
2, 3, 5, 6, 8, 9,
11, 12, 13, 14,
16, 17, 19, 20,
22, 23
nB0 – nB7
Data inputs/outputs (B side)
25, 48
nOE
Output enable input (active-Low)
4, 10, 15, 21,
28, 34, 39, 45
GND
Ground (0V)
7, 18, 31, 42
V
CC
Positive supply voltage
FUNCTION TABLE
INPUTS
INPUTS/OUTPUTS
nOE
nDIR
nAx
nBx
L
L
nAx = nBx
Inputs
L
H
Inputs
nBx = nAx
H
X
Z
Z
H = High voltage level
L
= Low voltage level
X = Don’t care
Z = High Impedance “off” state
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
V
CC
DC supply voltage
–0.5 to +4.6
V
I
IK
DC input diode current
V
I
< 0
–50
mA
V
I
DC input voltage
3
–0.5 to +7.0
V
I
OK
DC output diode current
V
O
< 0
–50
mA
V
OUT
DC output voltage
3
Output in Off or High state
–0.5 to +7.0
V
I
OUT
DC output current
Output in Low state
128
mA
Output in High state
–64
T
stg
Storage temperature range
–65 to +150
°
C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
°
C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
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