参数资料
型号: 74AUP1G0832GM,132
厂商: NXP Semiconductors
文件页数: 19/19页
文件大小: 0K
描述: IC GATE AND/OR 3-IN 6-XSON
产品培训模块: Logic Packages
特色产品: MicroPak?
标准包装: 5,000
系列: 74AUP
逻辑类型: 与/或门
电路数: 1
输入数: 3 输入(2,1)
施密特触发器输入:
输出类型: 单端
输出电流高,低: 4mA,4mA
电源电压: 0.8 V ~ 3.6 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 6-XFDFN
供应商设备封装: 6-XSON,SOT886(1.45x1)
包装: 带卷 (TR)
其它名称: 74AUP1G0832GM-H
74AUP1G0832GM-H-ND
935280619132
74AUP1G0832
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 22 June 2012
9 of 19
NXP Semiconductors
74AUP1G0832
Low-power 3-input AND-OR gate
[1]
All typical values are measured at nominal VCC.
[2]
tpd is the same as tPLH and tPHL.
[3]
CPD is used to determine the dynamic power dissipation (PD in
μW).
PD =CPD
× VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
12. Waveforms
Tamb = 25
°C
CPD
power dissipation
capacitance
fi = 1 MHz; VI =GND to VCC
VCC = 0.8 V
-
2.5
-
pF
VCC = 1.1 V to 1.3 V
-
2.7
-
pF
VCC = 1.4 V to 1.6 V
-
2.8
-
pF
VCC = 1.65 V to 1.95 V
-
2.9
-
pF
VCC = 2.3 V to 2.7 V
-
3.4
-
pF
VCC = 3.0 V to 3.6 V
-
4.0
-
pF
Table 9.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 10.
Symbol Parameter
Conditions
25
°C
40 °C to +125 °C
Unit
Min
Typ[1]
Max
Min
Max
(85
°C)
Max
(125
°C)
Measurement points are given in Table 10.
VOL and VOH are typical output voltage levels that occur with the output load.
Fig 9.
Input A, B and C to output Y propagation delay times
Y output
A, B, C input
Y output
GND
VI
VOH
VOL
VM
tPLH
tPHL
001aab593
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