参数资料
型号: 74HC1G00GW,125
厂商: NXP Semiconductors
文件页数: 8/12页
文件大小: 0K
描述: IC 2-IN NAND GATE SC88A-5
产品培训模块: Logic Packages
标准包装: 1
系列: 74HC
逻辑类型: 与非门
电路数: 1
输入数: 2
电源电压: 2 V ~ 6 V
电流 - 静态(最大值): 20µA
输出电流高,低: 2.6mA,2.6mA
逻辑电平 - 低: 0.5 V ~ 1.8 V
逻辑电平 - 高: 1.5 V ~ 4.2 V
额定电压和最大 CL 时的最大传播延迟: 23ns @ 6V,50pF
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
供应商设备封装: 5-TSSOP
封装/外壳: 6-TSSOP(5 引线),SC-88A,SOT-353
包装: 标准包装
产品目录页面: 835 (CN2011-ZH PDF)
其它名称: 568-2636-6
74HC_HCT1G00
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 25 September 2013
5 of 12
NXP Semiconductors
74HC1G00; 74HCT1G00
2-input NAND gate
11. Dynamic characteristics
[1]
tpd is the same as tPLH and tPHL.
[2]
CPD is used to determine the dynamic power dissipation PD (W).
PD =CPD VCC2 fi + (CL VCC2 fo)where:
fi = input frequency in MHz; fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in Volts
(C
L VCC
2
f
o) = sum of outputs
ICC
supply current
VI =VCC or GND; IO =0A;
VCC =5.5 V
--
10
-
20
A
I
CC
additional supply
current
per input; VCC = 4.5 V to 5.5 V;
VI =VCC 2.1 V; IO =0A
-
500
-
850
A
CI
input capacitance
- 1.5
-
pF
Table 7.
Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb =25 C.
Symbol
Parameter
Conditions
40 C to +85 C
40 C to +125 C
Unit
Min
Typ
Max
Min
Max
Table 8.
Dynamic characteristics
GND = 0 V; tr = tf 6.0 ns; All typical values are measured at Tamb =25 C. For test circuit, see Figure 6
Symbol Parameter
Conditions
40 C to +85 C
40 C to +125 C Unit
Min
Typ
Max
Min
Max
For type 74HC1G00
tpd
propagation delay A and B to Y; see Figure 5
VCC = 2.0 V; CL = 50 pF
-
25
115
-
135
ns
VCC = 4.5 V; CL =50pF
-
9
23
-
27
ns
VCC = 5.0 V; CL =15pF
-
7
-
ns
VCC = 6.0 V; CL =50pF
-
8
20
-
23
ns
CPD
power dissipation
capacitance
VI =GND to VCC
[2] -19
-
pF
For type 74HCT1G00
tpd
propagation delay A and B to Y; see Figure 5
VCC = 4.5 V; CL =50pF
-
12
24
-
27
ns
VCC = 5.0 V; CL =15pF
-
10
-
ns
CPD
power dissipation
capacitance
VI =GND to VCC 1.5 V
[2] -21
-
pF
相关PDF资料
PDF描述
OSTVK141150 CONN TERM BLK HDR 14POS 3.5MM
OSTOQ203250 CONN TERM BLK HDR 20POS 3.81MM
OSTOQ203251 CONN TERM BLK HDR 20POS 3.81MM
OSTOQ201250 CONN TERM BLK HEADER 20POS 3.5MM
OSTV7143151 TERM BLOCK PLUG 3.81MM 14POS
相关代理商/技术参数
参数描述
74HC1G00GW-G 制造商:NXP Semiconductors 功能描述:NAND Gate 1-Element 2-IN CMOS 5-Pin TSSOP T/R
74HC1G00GW-Q100H 制造商:NXP Semiconductors 功能描述:74HC1G00GW-Q100/UMT5/REELR// - Tape and Reel 制造商:NXP Semiconductors 功能描述:IC GATE NAND 2-INPUT 5TSSOP
74HC1G00GW-R 功能描述:逻辑门 2-INPUT NAND GATE RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量(输入/输出):2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel
74HC1G02 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:2-input NOR gate
74HC1G02GV 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:2-input NOR gate