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参数资料
| 型号： | 74HCT574DB,112 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 18/19页 |
| 文件大小： | 0K |
| 描述： | IC OCTAL D F-F POS-EDGE 20-SSOP |
| 产品培训模块： | Logic Packages |
| 标准包装： | 924 |
| 系列： | 74HCT |
| 功能： | 标准 |
| 类型： | D 型总线 |
| 输出类型： | 三态非反相 |
| 元件数： | 1 |
| 每个元件的位元数： | 8 |
| 频率 - 时钟： | 69MHz |
| 延迟时间 - 传输： | 18ns |
| 触发器类型： | 正边沿 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-SSOP（0.209"，5.30mm 宽） |
| 包装： | 管件 |
74HC_HCT574
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 5 — 25 April 2012
8 of 19
NXP Semiconductors
74HC574; 74HCT574
Octal D-type flip-flop; positive edge-trigger; 3-state
[1]
tpd is the same as tPLH and tPHL.
[2]
ten is the same as tPZH and tPZL.
[3]
tdis is the same as tPLZ and tPHZ.
[4]
tt is the same as tTHL and tTLH.
[5]
CPD is used to determine the dynamic power dissipation (PD in
μW).
PD =CPD
× VCC2 × fi × N+ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(C
L
× VCC2 × fo) = sum of outputs.
CPD
power
dissipation
capacitance
CL =50pF;f= 1 MHz;
VI =GND to VCC
-22
-
pF
For type 74HCT574
tpd
propagation
delay
CP to Qn; see Figure 7
VCC = 4.5 V
-
18
33
-
41
-
50
ns
VCC =5V; CL =15pF
-
15
-
ns
ten
enable time
OE to Qn; see Figure 9
VCC = 4.5 V
-
19
33
-
41
-
50
ns
tdis
disable time
OE to Qn; see Figure 9
VCC = 4.5 V
-
16
28
-
35
-
42
ns
tt
transition
time
Qn; see Figure 7
VCC = 4.5 V
-
5
12
-
15
-
18
ns
tW
pulse width
CP HIGH or LOW;
see Figure 8
VCC = 4.5 V
16
7
-
20
-
24
-
ns
tsu
set-up time
Dn to CP; see Figure 8
VCC = 4.5 V
12
3
-
15
-
18
-
ns
th
hold time
Dn to CP; see Figure 8
VCC = 4.5 V
5
1-
5
-
5
-
ns
fmax
maximum
frequency
CP; see Figure 7
VCC = 4.5 V
30
69
-
24
-
20
-
MHz
VCC =5V; CL =15pF
-
76
-
MHz
CPD
power
dissipation
capacitance
CL =50pF;f= 1 MHz;
VI =GND to VCC
-25
-
pF
Table 7.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); CL = 50 pF unless otherwise specified; for test circuit see Figure 10.
Symbol Parameter
Conditions
25
°C
40 °C to +85 °C 40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
Min
Max
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