参数资料
型号: 74LVC1G86GW,165
厂商: NXP Semiconductors
文件页数: 16/19页
文件大小: 0K
描述: IC 2-IN EXCL-OR GATE 5TSSOP
产品培训模块: Logic Packages
标准包装: 10,000
系列: 74LVC
逻辑类型: XOR(异或)
电路数: 1
输入数: 2
电源电压: 1.65 V ~ 5.5 V
电流 - 静态(最大值): 200µA
输出电流高,低: 32mA,32mA
逻辑电平 - 低: 0.7 V ~ 0.8 V
逻辑电平 - 高: 1.7 V ~ 2 V
额定电压和最大 CL 时的最大传播延迟: 1.9ns @ 5V,50pF
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
供应商设备封装: 5-TSSOP
封装/外壳: 6-TSSOP(5 引线),SC-88A,SOT-353
包装: 带卷 (TR)
其它名称: 74LVC1G86GW-R
74LVC1G86GW-R-ND
935268824165
74LVC1G86
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 10 — 2 July 2012
6 of 19
NXP Semiconductors
74LVC1G86
2-input EXCLUSIVE-OR gate
[1]
All typical values are measured at VCC = 3.3 V and Tamb =25 C.
11. Dynamic characteristics
[1]
All typical values are measured at nominal VCC.
[2]
tpd is the same as tPLH and tPHL
[3]
CPD is used to determine the dynamic power dissipation (PD in W).
PD =CPD VCC2 fi N+ (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(C
L VCC
2
f
o) = sum of the outputs.
IOFF
power-off
leakage current
VCC = 0 V; VI or VO =5.5 V
-
0.1
10
-
200
A
ICC
supply current
VI = 5.5 V or GND; IO = 0 A;
VCC = 1.65 V to 5.5 V
-
0.1
10
-
200
A
I
CC
additional
supply current
per pin; VCC = 2.3 V to 5.5 V;
VI =VCC 0.6 V; IO =0 A
-
5
500
-
5000
A
CI
input
capacitance
VCC =3.3 V; VI = GND to VCC
-5
-
pF
Table 7.
Static characteristics …continued
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
40 C to +85 C
40 C to +125 C
Unit
Min
Typ[1]
Max
Min
Max
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for load circuit see Figure 9.
Symbol Parameter
Conditions
40 C to +85 C
40 C to +125 C Unit
Min
Max
Min
Max
tpd
propagation delay
A, B to Y; see Figure 8
VCC = 1.65 V to 1.95 V
1.0
3.7
9.9
1.0
13.0
ns
VCC = 2.3 V to 2.7 V
0.5
2.5
5.5
0.5
7.0
ns
VCC = 2.7 V
0.5
2.8
5.8
0.5
7.5
ns
VCC = 3.0 V to 3.6 V
0.5
2.3
5.0
0.5
6.5
ns
VCC = 4.5 V to 5.5 V
0.5
1.9
4.0
0.5
5.5
ns
CPD
power dissipation
capacitance
VI =GND to VCC
VCC = 3.3 V
-
25
-
pF
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