参数资料
型号: 74LVTH2245WMX
厂商: Fairchild Semiconductor
文件页数: 3/9页
文件大小: 0K
描述: IC TRANSCEIVER 3-ST 8BIT 20SOIC
标准包装: 1,000
系列: 74LVTH
逻辑类型: 收发器,非反相
元件数: 1
每个元件的位元数: 8
输出电流高,低: 32mA,64mA; 12mA,12mA
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 20-SOIC(0.295",7.50mm 宽)
供应商设备封装: 20-SOIC
包装: 带卷 (TR)
1999 Fairchild Semiconductor Corporation
www.fairchildsemi.com
74LVT2245, 74LVTH2245 Rev. 1.5.0
3
74L
VT2245,
74L
VTH2245
Lo
w
V
olta
g
e
Octal
Bidirectional
T
ransceiver
with
3-ST
A
TE
Inputs/Outputs
and
25
Series
Resistor
s
in
the
B
P
o
rt
Outputs
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Note:
1. IO Absolute Maximum Rating must be observed.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
Parameter
Rating
VCC
Supply Voltage
–0.5V to +4.6V
VI
DC Input Voltage
–0.5V to +7.0V
VO
DC Output Voltage
Output in 3-STATE
–0.5V to +7.0V
Output in HIGH or LOW State(1)
–0.5V to +7.0V
IIK
DC Input Diode Current, VI < GND
–50mA
IOK
DC Output Diode Current, VO < GND
–50mA
IO
DC Output Current, VO > VCC
Output at HIGH State
64mA
Output at LOW State
128mA
ICC
DC Supply Current per Supply Pin
±64mA
IGND
DC Ground Current per Ground Pin
±128mA
TSTG
Storage Temperature
–65°C to +150°C
Symbol
Parameter
Min
Max
Units
VCC
Supply Voltage
2.7
3.6
V
VI
Input Voltage
0
5.5
V
IOH
HIGH-Level Output Current
A Port
–32
mA
B Port
–12
IOL
LOW-Level Output Current
A Port
64
mA
B Port
12
TA
Free Air Operating Temperature
–40
+85
°C
t / V
Input Edge Rate, VIN = 0.8V–2.0V, VCC = 3.0V
0
10
ns/V
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