参数资料
| 型号： | 74VCXH245MNR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/8页 |
| 文件大小： | 0K |
| 描述： | IC TXRX 8BIT 3STATE BIDIR 20QFN |
| 标准包装： | 1 |
| 系列： | 74VCXH |
| 逻辑类型： | 收发器，非反相 |
| 元件数： | 1 |
| 每个元件的位元数： | 8 |
| 输出电流高，低： | 24mA，24mA |
| 电源电压： | 1.65 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-VFQFN 裸露焊盘 |
| 供应商设备封装： | 20-QFN（2.5x4.5） |
| 包装： | 剪切带 (CT) |
| 其它名称： | 74VCXH245MNR2GOSCT |
74VCXH245
http://onsemi.com
5
Limits
TA = 40°C to +85°C
VCC = 3.0 V to 3.6 V VCC = 2.3 V to 2.7 V
VCC = 1.65 V to1.95 V
Symbol
Parameter
Waveform
Min
Max
Min
Max
Min
Max
Unit
tPLH
tPHL
Propagation Delay
Input to Output
0.6
3.5
0.8
4.2
1.5
8.4
ns
tPZH
tPZL
Output Enable Time to
High and Low Level
0.6
4.5
0.8
5.6
1.5
9.8
ns
tPHZ
tPLZ
Output Disable Time From
High and Low Level
0.6
3.6
0.8
4.0
1.5
7.2
ns
tOSHL
tOSLH
OutputtoOutput Skew
(Note 8)
0.5
0.75
ns
7. For CL = 50 pF, add approximately 300 ps to the AC maximum specification.
8. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.
The specification applies to any outputs switching in the same direction, either HIGHtoLOW (tOSHL) or LOWtoHIGH (tOSLH); parameter
guaranteed by design.
DYNAMIC SWITCHING CHARACTERISTICS
TA = +25°C
Symbol
Characteristic
Condition
Typ
Unit
VOLP
Dynamic LOW Peak Voltage
(N
VCC = 1.8 V, CL = 30 pF, VIH = VCC, VIL = 0 V
0.3
V
(Note 9)
VCC = 2.5 V, CL = 30 pF, VIH = VCC, VIL = 0 V
0.7
VCC = 3.3 V, CL = 30 pF, VIH = VCC, VIL = 0 V
1.0
VOLV
Dynamic LOW Valley Voltage
(N
VCC = 1.8 V, CL = 30 pF, VIH = VCC, VIL = 0 V
0.3
V
(Note 9)
VCC = 2.5 V, CL = 30 pF, VIH = VCC, VIL = 0 V
0.7
VCC = 3.3 V, CL = 30 pF, VIH = VCC, VIL = 0 V
1.0
VOHV
Dynamic HIGH Valley Voltage
(N
VCC = 1.8 V, CL = 30 pF, VIH = VCC, VIL = 0 V
1.3
V
(Note 10)
VCC = 2.5 V, CL = 30 pF, VIH = VCC, VIL = 0 V
1.7
VCC = 3.3 V, CL = 30 pF, VIH = VCC, VIL = 0 V
2.0
9. Number of outputs defined as “n”. Measured with “n1” outputs switching from HIGHtoLOW or LOWtoHIGH. The remaining output is
measured in the LOW state.
10. Number of outputs defined as “n”. Measured with “n1” outputs switching from HIGHtoLOW or LOWtoHIGH. The remaining output is
measured in the HIGH state.
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Condition
Typical
Unit
CIN
Input Capacitance
Note 11
6
pF
COUT
Output Capacitance
Note 11
7
pF
CPD
Power Dissipation Capacitance
Note 11, 10 MHz
20
pF
11. VCC = 1.8, 2.5 or 3.3 V; VI = 0 V or VCC.
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