- 您现在的位置：买卖IC网 > PDF目录369347 > 784215A (NEC Corp.) MOS INTEGRATED CIRCUIT PDF资料下载
参数资料
| 型号： | 784215A |
| 厂商： | NEC Corp. |
| 英文描述： | MOS INTEGRATED CIRCUIT |
| 中文描述： | 马鞍山集成电路 |
| 文件页数： | 97/100页 |
| 文件大小： | 564K |
| 代理商： | 784215A |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页第94页第95页第96页当前第97页第98页第99页第100页
Data Sheet U14121EJ2V0DS00
97
μ
PD784214A, 784215A, 784216A, 784217A, 784218A, 784214AY, 784215AY, 784216AY, 784217AY, 784218AY
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS
Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to V
DD
or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.
www.DataSheet4U.com
相关PDF资料 |
PDF描述 |
|---|---|
| 784215AY | MOS INTEGRATED CIRCUIT |
| 784216A | MOS INTEGRATED CIRCUIT |
| 784216AY | MOS INTEGRATED CIRCUIT |
| 784217A | MOS INTEGRATED CIRCUIT |
| 784217AY | MOS INTEGRATED CIRCUIT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 784215AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS INTEGRATED CIRCUIT |
| 784216A | 制造商:NEC 制造商全称:NEC 功能描述:MOS INTEGRATED CIRCUIT |
| 784216AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS INTEGRATED CIRCUIT |
| 784217A | 制造商:NEC 制造商全称:NEC 功能描述:MOS INTEGRATED CIRCUIT |
| 784217AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS INTEGRATED CIRCUIT |
发布紧急采购，3分钟左右您将得到回复。