参数资料
型号: 79LV2040
厂商: Maxwell Technologies, Inc
英文描述: 20 Megabit (512K x 40-Bit) Low Voltage EEPROM MCM
中文描述: 20兆位(为512k × 40位)低电压的EEPROM亿立方米
文件页数: 12/17页
文件大小: 471K
代理商: 79LV2040
M
12
09.07.05 Rev 1
All data sheets are subject to change without notice
2005 Maxwell Technologies
All rights reserved
20 Megabit (512K x 40-Bit) EEPROMMCM
79LV2040
Data Polling
Data Polling function allows the status of the EEPROMto be determned. If EEPROMis set to read mode during a
write cycle, an inversion of the last byte of data to be loaded outputs fromI/O 7 to indicate that the EEPROM is per-
formng a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determne the status of the EEPROM. The RDY/Busy signal
goes low (V
OL)
after the first write signal. At the end of the write cycle, the RDY/Busy returns to a high state ( V
OH
).
RES Signal
When RES is LOW (V
L
), the EEPROMcannot be read or programmed. The EEPROM data must be protected by
keeping RES low when V
CC
is power on and off. RES should be high (V
H
) during read and programmng operations.
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROMto programmng
mode by mstake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its
width is 20ns or less in programmng mode. Be careful not to allow noise of a width more than 20ns on the control
pins
.
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79LV2040RPFE-25 20 Megabit (512K x 40-Bit) Low Voltage EEPROM MCM
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