参数资料
型号: 7EL2
厂商: TEXAS INSTRUMENTS INC
元件分类: 浪涌电流限制器
英文描述: 400 V, 10 A, SILICON SURGE PROTECTOR
封装: BUTTON CELL PACKAGE-2
文件页数: 1/8页
文件大小: 234K
代理商: 7EL2
TELECOMMUNICATION SYSTEM PRIMARY PROTECTION
7EL2
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright 1999 Texas Instruments Limited
1
PRODUCTION DATA information is current as of
publication date. Products conform to specifications
per the terms of Texas Instruments standard warranty.
Production processing does not necessary include
testing of all parameters.
JANUARY 1999
Silicon dies designed and manufactured
by Power Innovations, Bedford, UK.
exclusively for Texas Instruments.
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
q
Rated for International Surge Wave Shapes
q
Gas Discharge Tube (GDT) Replacement
q
Planar Passivated Junctions in a Protected
Cell Construction
Low Off-State Current
< 0.5 A
DEVICE
V(BR)
MINIMUM
V
V(BO)
MINIMUM
V
V(BO)
MAXIMUM
V
7EL2
±245
±265
±400
DEVICE
ITU-T K28
(10/700)
GR-974-CORE
(10/1000)
ITSP
A
ITSP
A
7EL2
±400
±300
Extended Service Life
q
Soldered Copper Electrodes
High Current Capability
Cell Construction Short Circuits Under Excessive Current Conditions
description
These devices are primary protector components for semiconductor arrester assemblies intended to meet the
generic requirements of Bellcore GR-974-CORE (November 1994) or ITU-T Recommendation K28 (03/93).
To conform to the specified environmental requirements, the 7EL2 must be installed in a housing which
maintains a stable microclimate during these tests.
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides. The 7EL2 is guaranteed to voltage limit and withstand the listed
international lightning surges in both polarities.
These monolithic protection devices are constructed using two nickel plated copper electrodes soldered to
each side of the silicon chip. This packaging approach allows heat to be removed from both sides of the
silicon, resulting in the doubling of the devices thermal capacity, enabling a power line cross current capability
of 10 A rms for 1 second. One of the 7EL2’s copper electrodes is specially shaped to promote a progressive
shorting action (at 50/60 Hz currents greater than 60 A). The assembly must hold the 7EL2 in compression,
so that the cell electrodes can be forced together during overstress testing. Under excessive power line cross
conditions the 7EL2 will fail short circuit, providing maximum protection to the equipment.
device symbol
T
R
SD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
T(A)
R(B)
CELL PACKAGE
(SIDE VIEW)
MD4XACA
相关PDF资料
PDF描述
7EL2 SILICON SURGE PROTECTOR
7FLH-RSM1-TB(LF)(SN) 7 CONTACT(S), FEMALE, STRAIGHT FFC/FPC CONNECTOR, SURFACE MOUNT
7FLH-RSM1-TB 7 CONTACT(S), FEMALE, STRAIGHT FFC/FPC CONNECTOR, SURFACE MOUNT
7FLH-SM1-TB(LF)(SN) 7 CONTACT(S), FEMALE, STRAIGHT FFC/FPC CONNECTOR, SURFACE MOUNT
7FLH-SM1-TB 7 CONTACT(S), FEMALE, STRAIGHT FFC/FPC CONNECTOR, SURFACE MOUNT
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