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参数资料
| 型号： | 7N60-TA3-T |
| 厂商： | 友顺科技股份有限公司 |
| 英文描述： | 7.4 Amps, 600 Volts N-CHANNEL MOSFET |
| 中文描述： | 7.4安培，600伏特N通道MOSFET |
| 文件页数： | 6/7页 |
| 文件大小： | 154K |
| 代理商： | 7N60-TA3-T |
7N60
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 7
QW-R502-076,B
T Y PICAL CHARACT ERIS T ICS
10
1
10
0
10
1
10
-1
10
0
Drain-Source Voltage, V
DS
(V)
D
D
(
On-Region Characteristics
10
-1
V
GS
Top: 15.0V
10 .0V
8 .0V
7 .0V
6 .5V
6 .0V
Bottorm:5.5V
*Notes:
1. 250
2. T
C
=25
s Pulse Test
10
0
10
-1
2
Gate-Source Voltage, V
GS
(V)
D
D
(
Transfer Characteristics
4
6
8
10
150
25
10
1
*Notes:
1. V
DS
=50V
2. 250
s Pulse Test
-55
0.0
0
D
D
)
Drain Current, I
D
(A)
5
10
On-Resistance Variation vs. Drain Current
and Gate Voltage
15
20
25
*Note: T
J
=25
V
GS
=10V
0.5
1.0
1.5
2.0
2.5
V
GS
=20V
10
0
10
-1
0.2
Source-Drain Voltage, V
SD
(V)
R
D
(
Body Diode Forward Voltage Variation vs
Source Current and Temperature
0.4
0.6
0.8
1.0
1.2
25
150
10
1
*Notes:
1. V
GS
=0V
2.250
s Pulse Test
2000
0
10
-1
Drain-SourceVoltage V
DS
(V)
C
Capacitance Characteristics
1800
400
10
0
10
1
*Notes:
1. V
GS
=0V
2. f = 1MHz
1000
800
C
rss
C
oss
C
iss
C
iss=
C
g
s+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
10
1
10
0
10
-1
Drain-Source Voltage, V
DS
(V)
I
D
D
Maximum Safe Operating Area
10
2
10
1
10
0
100
1ms
10ms
s
10
3
DC
*Notes:
1. Tc=25
2. T
J
=150
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
10
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 7N60-TF3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:7.4 Amps, 600 Volts N-CHANNEL MOSFET |
| 7N60Z | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:7.4 Amps, 600/650 Volts N-CHANNEL MOSFET |
| 7N60Z_10 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:7.4 Amps, 600/650 Volts N-CHANNEL MOSFET |
| 7N60Z_11 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:7.4A, 600V N-CHANNEL POWER MOSFET |
| 7N60ZG-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:7.4A, 600V N-CHANNEL POWER MOSFET |
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