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参数资料
| 型号： | 7P-FJ |
| 厂商： | J S T MFG CO LTD |
| 元件分类： | 电路板相叠连接器 |
| 英文描述： | 7 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SOLDER, PLUG |
| 文件页数： | 3/3页 |
| 文件大小： | 145K |
| 代理商： | 7P-FJ |
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1998
Document No. D16134EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC2654
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
FEATURES
Large current capacitance in small dimension: IC(DC) = 7 A
Low collector saturation voltage:
VCE(sat) = 0.3 V MAX. (IC = 3.0 A)
Ideal for use in a lamp driver
Complementary transistor: 2SA1129
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
40
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
7.0
A
Collector current (pulse)
IC(pulse)*15
A
Base current (DC)
IB(DC)
3.5
A
Total power dissipation
PT (Tc = 25
°C)
40
W
Total power dissipation
PT (Ta = 25
°C)
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 300
s, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 40 V, IE = 0
10
A
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
10
A
DC current gain
hFE1
VCE = 1.0 V, IC = 3 A*
40
320
DC current gain
hFE2
VCE = 1.0 V, IC = 5 A*
20
Collector saturation voltage
VCE(sat)1
IC = 3.0 A, IB = 0.1 A*
0.3
V
Base saturation voltage
VBE(sat)1
IC = 3.0 A, IB = 0.1 A*
1.5
V
Collector saturation voltage
VCE(sat)2
IC = 5.0 A, IB = 0.5 A*
0.6
V
Base saturation voltage
VBE(sat)2
IC = 5.0 A, IB = 0.5 A*
2.0
V
Turn-on time
ton
1.0
s
Storage time
tstg
2.5
s
Fall time
tf
IC = 5.0 A, IB1 =
IB2 = 0.5 A
RL = 4.0
, VCC 20 V
PW
50
s, duty cycle ≤ 2 %
1.0
s
* Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE1 classification M: 40 to 80, L: 60 to 120, K: 100 to 200, J: 160 to 320
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