参数资料
型号: 8050S-E-AE3-R
厂商: UNISONIC TECHNOLOGIES CO LTD
元件分类: 小信号晶体管
英文描述: 700 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: HALOGEN FREE PACKAGE-3
文件页数: 2/4页
文件大小: 183K
代理商: 8050S-E-AE3-R
8050S
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-001,E
ABSOLUTE MAXIMUM RATING ( Ta=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
700
mA
SOT-23
350
mW
Collector Dissipation(Ta=25°C)
TO-92
PC
1
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC = 100μA, IE = 0
30
V
Collector-Emitter Breakdown Voltage
BVCEO
IC = 1mA, IB = 0
20
V
Emitter-Base Breakdown Voltage
BVEBO
IE = 100μA, IC =0
5
V
Collector Cut-Off Current
ICBO
VCB = 30V,IE = 0
1
uA
Emitter Cut-Off Current
IEBO
VEB = 5V, IC = 0
100
nA
hFE1
VCE = 1V, IC = 1mA
100
400
hFE2
VCE = 1V, IC = 150 mA
120
DC Current Gain(note)
hFE3
VCE = 1V, IC = 500mA
40
Collector-Emitter Saturation Voltage
VCEO(SAT) IC = 500mA, IB = 50mA
0.5
V
Base-Emitter Saturation Voltage
VBEO(SAT) IC = 500mA, IB = 50mA
1.2
V
Base-Emitter Saturation Voltage
VBEO(SAT) VCE = 1V, IC = 10mA
1.0
V
Current Gain Bandwidth Product
fT
VCE = 10V, IC = 50mA
100
MHz
Output Capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
9.0
pF
CLASSIFICATION OF hFE2
RANK
C
D
E
RANGE
120-200
160-300
280-400
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