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| 型号： | 80GN01M |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 80 mA, 5.5 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MCP, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 79K |
| 代理商： | 80GN01M |
80GN01M
No.8121-1/8
Features
High cutoff frequency : fT= 8.0GHz typ.
High gain :
S21e
2 =11.0dB typ (f=1GHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
11
V
Collector-to-Emitter Voltage
VCEO
5.5
V
Emitter-to-Base Voltage
VEBO
2V
Collector Current
IC
80
mA
Collector Dissipation
PC
Mounted on a ceramic board (250mm2
0.8mm)
400
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=10V, IE=0
0.1
μA
Emitter Cutoff Current
IEBO
VEB=1V, IC=0
1
μA
DC Current Gain
hFE
VCE=3V, IC=10mA
100
180
Gain-Bandwidth Product
fT1VCE=1V, IC=5mA
4.5
GHz
fT2VCE=3V, IC=30mA
6.0
8.0
GHz
Output Capacitance
Cob
VCB=1V, f=1MHz
1.3
1.6
pF
Reverse Transfer Capacitance
Cre
VCB=1V, f=1MHz
1.0
pF
Forward Transfer Gain
S21e
21VCE=1V, IC=5mA, f=1GHz
8.5
dB
S21e
22VCE=3V, IC=30mA, f=1GHz
8.5
11.0
dB
Noise Figure
NF
VCE=3V, IC=5mA, f=1GHz
1.2
1.9
dB
Marking : ZF
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8121
21505AB TS IM TB-00000466
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
80GN01M
NPN Epitaxial Planar Silicon Transistor
UHF Wide-band Low-noise Amplifier
Applications
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