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参数资料
| 型号： | 85EPS12JPBF |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 85 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封装： | POWIRTAB-1 |
| 文件页数： | 1/6页 |
| 文件大小： | 120K |
| 代理商： | 85EPS12JPBF |
I
F(AV)
Sine waveform
@ T
C
= 95° C
I
F(RMS)
160
A
V
RRM
range (*)
800 and 1200
V
I
FSM
1400
A
V
F
@85A,T
J
=25°C
1.15
V
T
J
range
- 40 to 150
°C
Characteristics
85EPS..
Units
85
A
Major Ratings and Characteristics
Description/ Features
The 85EPS.. rectifier
SAFE
IR series has been
optimized for very low forward voltage drop, with
moderate leakage.
The glass passivation technology used has reliable
operation up to 150° C junction temperature.
Available in the new Pow
IRtabTM package, this new
series is suitable for a large range of applications
combining excellent die to footprint ratio and sturdeness
connectivity for use in high current environments.
Bulletin I2139 rev. C 10/02
I
F(RMS) = 160A
V
F
< 1.15V @ 85A
I
FSM
= 1400A
V
RRM
800 and 1200V
SAFE
IR Series
85EPS..
INPUT RECTIFIER DIODE
1
(*)
for higher voltage up to 1600V contact factory
Case Styles
85EPS..
85EPS..J
www.irf.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
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