参数资料
型号: 8ETL06FPPBF
厂商: Vishay Semiconductors
文件页数: 1/3页
文件大小: 0K
描述: DIODE HYPERFAST 600V 8A TO220FP
产品目录绘图: TO-220AC, FULLPAK Front
其它图纸: TO-220AC, FULLPAK Circuit
标准包装: 1,000
系列: FRED Pt™
二极管类型: 标准
电压 - (Vr)(最大): 600V
电流 - 平均整流 (Io): 8A
电压 - 在 If 时为正向 (Vf)(最大): 1.05V @ 8A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 250ns
电流 - 在 Vr 时反向漏电: 5µA @ 600V
安装类型: 通孔
封装/外壳: TO-220-2 全填充熔芯,ITO-220AC
供应商设备封装: ITO-220AC
包装: 管件
其它名称: *8ETL06FPPBF
VS-8ETL06FPPBF
VS-8ETL06FPPBF-ND
VS8ETL06FPPBF
VS8ETL06FPPBF-ND
Q vs-8ETLo6PbI=, Vs-8ETL06-N3, Vs-8ETL06FPPbF, VS-8ETL06FP-N37 www'ViShay'C°m Vishay SemiconductorsUltralow VF Hyperfast Rectifierfor Discontinuous Mode PFC, 8 A FRED Pt?
A I FEATURES
' ' Hyperfast recoverytime
\ / 0 Benchmark ultralow forward Voltage drop\\ ,o 175 °C operating junction temperature @
To-22oAC To-220 FULL-PAK ' L°W 'eakage Currem
- Fully isolated package 0/‘NS : 2500 VRMS) gm:
c§‘ahs[}e[je . UL E78996 pending w HALOGEN2 - Compliant to RoHs Directive 2002/95/EC 55355
' Designed and qualified according to JEDEC—JESD47
- Halogen—free according to IEC 61249-221 definition
1 3 1 3 (—N3 only)Cathode Anode Cathode Anode
S 8 DESCRIPTIONv -8ETLO6PbF V -8ETL06FPPbF . .VS_8ETL°6_N3 Vs_8ETLo6FP_N3 State of the art, Ultralow VF, soft-Switching hyperfastrectitiers optimized for Discontinuous (Critical) Mode (DCM)Power Factor Correction (PFC).
The minimized conduction loss, optimized stored chargePRODUCT SUMMARY and low recovery current minimize the switching losses and
TO'220ACiTO'220FP reduce over dissipation in the Switching element and
snubbers.
The device is also intended for use as a freewheeling diodein power supplies and other power switching applications.
APPLICATIONS
AC/DC SMPS 70 W ‘O 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST coNDITIoNS_ _ TC : 160 “C
Repetitive peak reverse voltage
Average rectified forward currentFULL-PAK TC : 142 °C
Non-repetitive peak surge current
Repetitive peak forward current
Operating junction and storage temperatures
ELECTRICAL SPECIFICATIONS (TJ = 25 0C unless otherwise specified)
PARAMETER TEST CONDITIONS
Breakdown voltage,
blocking voltage IR _ 100 “AForward voltage J I 8 A T 150 no
F : l J :VH : VR rated
Reverse leakage Current
TJ :15[) °C, VR : VH rated
Junction capacitance VH : 600 V
Revision: 02-Jan-12 1 Document Number: 94028
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiQdesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000Measured lead to lead 5 mm from package body
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