- 您现在的位置：买卖IC网 > PDF目录223153 > 8ETX06STRL 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB PDF资料下载
参数资料
| 型号： | 8ETX06STRL |
| 元件分类： | 整流器 |
| 英文描述： | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | PLASTIC, D2PAK-3 |
| 文件页数： | 3/10页 |
| 文件大小： | 1168K |
| 代理商： | 8ETX06STRL |
2
8ETX06, 8ETX06S, 8ETX06-1, 8ETX06FP
Bulletin PD-20766 rev. C 09/06
www.irf.com
VBR, Vr
Breakdown Voltage,
600
-
V
IR = 100μA
Blocking Voltage
VF
Forward Voltage
-
2.3
3.0
V
IF = 8A, TJ = 25°C
-
1.4
1.7
V
IF = 8A, TJ = 150°C
IR
Reverse Leakage Current
-
0.3
50
μAVR = VR Rated
-
35
500
μATJ = 150°C, VR = VR Rated
CT
Junction Capacitance
-
17
-
pF
VR = 600V
LS
Series Inductance
-
8.0
-
nH
Measured lead to lead 5mm from package body
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max
Test Conditions
Units
trr
Reverse Recovery Time
-
15
19
ns
IF = 1A, diF/dt = 100A/μs, VR = 30V
-16
24
IF = 8A, diF/dt = 100A/μs, VR = 30V
-17
-
TJ = 25°C
-40
-
TJ = 125°C
IRRM
Peak Recovery Current
-
2.3
-
A
TJ = 25°C
-
4.5
-
TJ = 125°C
Qrr
Reverse Recovery Charge
-
20
-
nC
TJ = 25°C
-
100
-
TJ = 125°C
trr
Reverse Recovery Time
-
31
-
ns
IRRM
Peak Recovery Current
-
12
-
A
T
J = 125°C
Qrr
Reverse Recovery Charge
-
195
-
nC
Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified)
I
F = 8A
diF /dt = 200A/μs
VR = 390V
Parameters
Min Typ Max
Test Conditions
Units
I
F = 8A
diF /dt = 600A/μs
VR = 390V
Parameters
Min
Typ
Max
Units
TJ
Max. Junction Temperature Range
-
175
°C
TStg
Max. Storage Temperature Range
- 65
-
175
RthJC
Thermal Resistance, Junction to Case
Per Leg
-
1.4
2
°C/W
(Fullpack) Per Leg
-
3.4
4.3
RthJA
Thermal Resistance, Junction to Ambient
Per Leg
-
70
RthCS
Thermal Resistance, Case to Heatsink
-
0.5
-
Weight
-
2.0
-
g
-
0.07
-
(oz)
MountingTorque
6.0
-
12
Kg-cm
5.0
-
10
lbf.in
Thermal - Mechanical Characteristics
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
相关PDF资料 |
PDF描述 |
|---|---|
| 8ETX06STRRPBF | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 8ETX06STRR | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 8EWF06S | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA |
| 8P128SEA0202I15 | 8K X 8 MULTI DEVICE SRAM CARD, 150 ns, UUC68 |
| 8R128SEA0101C25 | 8K X 8 MULTI DEVICE SRAM CARD, 250 ns, UUC68 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 8ETX06STRLPBF | 制造商:Vishay Angstrohm 功能描述:Diode Switching 600V 8A 3-Pin(2+Tab) D2PAK T/R 制造商:Vishay Intertechnologies 功能描述:600V 8A HyperFast Rect D2PAK |
| 8ETX06STRR | 功能描述:整流器 600 Volt 8.0 Amp RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 8ETX06STRRPBF | 制造商:Vishay Angstrohm 功能描述:Diode Switching 600V 8A 3-Pin(2+Tab) D2PAK T/R |
| 8EWF | 制造商:IRF 制造商全称:International Rectifier 功能描述:SURFACE MOUNTABLE FAST SOFT RECOVERY DIODE |
| 8EWF..S | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:optimized or combined short reverse rocovery time, low forward voltage drop and low leakage current |
发布紧急采购，3分钟左右您将得到回复。