参数资料
型号: 8P001SRA0403I15
厂商: WHITE ELECTRONIC DESIGNS CORP
元件分类: SRAM
英文描述: 512K X 16 MULTI DEVICE SRAM CARD, 150 ns, XMA68
封装: CARD2-68
文件页数: 6/10页
文件大小: 111K
代理商: 8P001SRA0403I15
February 2002 Rev. 6
5
PCMCIA SRAM Memory Card
SRA Series
PC Card Products
Absolute Maximum Ratings (2)
Operating Temperature TA (ambient)
Commercial
0°C to +60 °C
Industrial
-40°C to +85 °C
Storage Temperature
Commercial
0°C to +60 °C
Industrial
-40°C to +85 °C
Voltage on any pin relative to VSS
-0.5V to VCC+0.5V (1)
VCC supply Voltage relative to VSS
-0.5V to +7.0V
Notes:
(1) During transitions, inputs may undershoot to
-2.0V or overshoot to VCC +2.0V for periods
less than 20ns.
(2) Stress greater than those listed under
“Absolute Maximum ratings” may cause
permanent damage to the device. This is a
stress rating only and functional operation at
these or any other conditions greater than those
indicated in the operational sections of this
specification is not implied. Exposure to
absolute maximum rating conditions for
extended periods may affect reliability.
Sym
Parameter
Density
Notes
Min
Typ
(3)
Max
Units
Test Conditions
64KB
90
180
128KB
90
180
256KB
90
180
512KB
90
180
ICC
VCC Active Current
1MB
to
8MB
1
110
190
mA
VCC = 5.25V
tcycle = 150ns
ICCS
VCC Standby Current
All
2,4
< 0.1
< 1
10
mA
VCC = 5.25V
Control Signals = VCC
ILI
Input Leakage Current
All
5,6
±20
A
VCC = VCCMAX
Vin =VCC or VSS
ILO
Output Leakage Current
All
6
±20
A
VCC = VCCMAX
Vout =VCC or VSS
VIL
Input Low Voltage
All
6
0
0.8
V
VIH
Input High Voltage
All
6
3.85
VCC
+0.5
V
VOL
Output Low Voltage
All
6
0.4
V
IOL = 3.2mA
VOH
Output High Voltage
All
6
VCC-
0.4
VCC
V
IOH = -2.0mA
Notes:
1. All currents are for x16 mode and are RMS values unless otherwise specified.
2. Control Signals: CE
1#, CE2#, OE#, WE#, REG#.
3. Typical: VCC = 5V, T = +25C.
4. ICCS includes battery recharge current. Value depends on battery discharge level. ICCS min is specified for fully
charged battery. ICCS typical value is specified for battery discharge to 2.7V. ICCS max is specified for a fully
discharged battery (0V). Battery will recharge to 1.5V in 20 sec.
5. Values are the same for byte and word wide modes for all card densities.
6. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 A when VIN = GND due to
internal pull-up resistors.
CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
DC Characteristics (1)
Battery Characteristics
SRA11-14
SRA01-04
Parameter
Density
Notes
Type I
Type II
Units
Conditions
Battery Life
All
(1)
min 10
years
Normal operation, T=25C
256KB
-
24
60
512KB, 1MB
32
18
45
2MB
22
12
30
4MB
12
717
6MB
12
7
17
Battery
Backup Time
8MB
(2)
--
12
months
(typical)
T=25C
Battery backup time is a
calculated value and is not
guaranteed. This should
not be used to schedule
battery recharging.
Notes:
1. Battery Life refers to functional lifetime of battery.
2. Battery backup time is density and temperature dependent.
相关PDF资料
PDF描述
8P001SRA1105C15 512K X 16 MULTI DEVICE SRAM CARD, 150 ns, XMA68
8P001SRA1305C15 512K X 16 MULTI DEVICE SRAM CARD, 150 ns, XMA68
8R0083100C15 4M X 16 MULTI DEVICE SRAM CARD, 150 ns, UUC
8R0083305I25 4M X 16 MULTI DEVICE SRAM CARD, 150 ns, UUC
8P0023204C15 1M X 16 MULTI DEVICE SRAM CARD, 150 ns, UUC
相关代理商/技术参数
参数描述
8P-03AFFM-QL5A01 功能描述:M8 CONN 制造商:amphenol ltw 系列:* 零件状态:在售 标准包装:10
8P-03AFFM-QL5A02 功能描述:M8 CONN 制造商:amphenol ltw 系列:* 零件状态:在售 标准包装:10
8P-03AFFM-QL5A05 功能描述:M8 CONN 制造商:amphenol ltw 系列:* 零件状态:在售 标准包装:10
8P-03AFFM-QL5A10 功能描述:M8 CONN 制造商:amphenol ltw 系列:* 零件状态:在售 标准包装:10
8P-03AFFM-QL5B01 功能描述:M8 CONN 制造商:amphenol ltw 系列:* 零件状态:在售 标准包装:10