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参数资料
| 型号： | 8P4SMA |
| 元件分类： | 晶闸管 |
| 英文描述： | 12.56 A, 400 V, SCR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 269K |
| 代理商： | 8P4SMA |
Data Sheet D17164EJ4V0DS
2
8P2SMA, 8P4SMA
MAXIMUM RATINGS
Parameter
Symbol
8P2SMA
8P4SMA
Unit
Remarks
Non-repetitive Peak Reverse Voltage
VRSM
300
500
V
Non-repetitive Peak Off-state Voltage
VDSM
300
500
V
Repetitive Peak Reverse Voltage
VRRM
200
400
V
Repetitive Peak Off-state Voltage
VDRM
200
400
V
Average On-state Current
IT(AV)
8 (TC = 88
°C, single phase half wave,
θ = 180°)
A
Refer to Figure 11
Effective On-state Current
IT(RMS)
12.6
A
and 12.
Surge On-state Current
ITSM
100 (f = 50 Hz, sine half wave, 1 cycle)
A
Refer to Figure 2.
110 (f = 60 Hz, sine half wave, 1 cycle)
Fusing Current
∫ iT2dt
45 (1 ms
≤ t ≤ 10 ms)
A
2s
Critical Rate Rise of On-state Current
dIT/dt
50
A/
μs
Peak Gate Power Dissipation
PGM
5 (f
≥ 50 Hz, Duty ≤ 10%)
W
Refer to Figure 3.
Average Gate Power Dissipation
PG(AV)
0.5
W
Peak Gate Forward Current
IFGM
2 (f
≥ 50 Hz, Duty ≤ 10%)
A
Peak Gate Reverse Voltage
VRGM
10
V
Junction Temperature
Tj
40 to +125
°C
Storage Temperature
Tstg
55 to +150
°C
ELECTRICAL CHARACTERISTICS (Tj = 25
°C)
Parameter
Symbol
Conditions
MIN.
TYP. MAX.
Unit
Remarks
Repetitive Peak Reverse Current
IRRM
VRM = VRRM
Tj = 25
°C
100
μA
Tj = 125
°C
2
mA
Repetitive Peak Off-state Current
IDRM
VDM = VDRM
Tj = 25
°C
100
μA
Tj = 125
°C
2
mA
On-state Voltage
VTM
ITM = 25 A
1.4
V
Refer to Figure 1.
Gate Trigger Current
IGT
VDM = 6 V, RL = 100
Ω
10
mA
Refer to Figure 4.
Gate Trigger Voltage
VGT
VDM = 6 V, RL = 100
Ω
1.5
V
Gate Non-trigger Voltage
VGD
Tj = 125
°C, VDM =
2
1 VDRM
0.2
V
Holding Current
IH
VDM = 24 V, ITM = 25 A
6
mA
Critical Rate Rise of Off-state Voltage
dv/dt
Tj = 125
°C, VDM = 3
2 VDRM
40
V/
μs
Circuit Commuted Turn-off Time
tq
Tj = 125
°C, ITM = 8 A
diR/dt = 15 A/
μs, VR ≥ 25 V,
VDM = 3
2 VDRM, dVD/dt = 10 V/μs
100
μs
Thermal Resistance
Note
Rth(j-c)
Junction to case DC
3.7
°C/W Refer to Figure 13.
Rth(j-a)
Junction to ambient DC
60
°C/W
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