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参数资料
| 型号： | 933029610113 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.075 A, 100 V, SILICON, SIGNAL DIODE, DO-35 |
| 封装： | HERMETIC SEALED, GLASS, SC-40, 2 PIN |
| 文件页数： | 5/11页 |
| 文件大小： | 122K |
| 代理商： | 933029610113 |
1999 May 26
3
Philips Semiconductors
Product specication
High-speed diode
1N914
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 10 mA; see Fig.3
1
V
IR
reverse current
see Fig.5
VR =20V
25
nA
VR =75V
5
A
VR =20V; Tj = 150 °C50
A
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
4
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 ; measured at
IR = 1 mA; see Fig.7
8ns
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 ; measured at
IR = 1 mA; see Fig.7
4ns
Vfr
forward recovery voltage
when switched from IF = 50 mA; tr = 20 ns;
see Fig.8
2.5
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
Rth j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
500
K/W
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