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参数资料
| 型号： | 933552420126 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 晶闸管 |
| 英文描述： | 0.8 A, 200 V, SCR, TO-92 |
| 封装： | PLASTIC, SPT, SC-43, TO-92 VARIANT, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 45K |
| 代理商： | 933552420126 |
Philips Semiconductors
Product specification
Thyristors
BT149 series
logic level
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated, sensitive gate thyristors in a
SYMBOL
PARAMETER
MAX.
UNIT
plastic envelope, intended for use in
general purpose switching and phase
BT149
B
D
G
control applications. These devices are
V
DRM, VRRM
Repetitive peak
200
400
600
V
intended to be interfaced directly to
I
T(AV)
off-state voltages
microcontrollers, logic integrated circuits
Average on-state
0.5
A
and other low power gate trigger circuits.
I
T(RMS)
current
I
TSM
RMS on-state current
0.8
A
Non-repetitive peak
8
A
on-state current
PINNING - TO92 variant
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
gate
3
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BDG
V
DRM, VRRM
Repetitive peak off-state
-
200
1
400
1
600
1
V
voltages
I
T(AV)
Average on-state current
half sine wave;
-
0.5
A
T
lead ≤ 83 C
I
T(RMS)
RMS on-state current
all conduction angles
-
0.8
A
I
TSM
Non-repetitive peak
t = 10 ms
-
8
A
on-state current
t = 8.3 ms
-
9
A
half sine wave;
T
j = 25 C prior to surge
I
2tI2t for fusing
t = 10 ms
-
0.32
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 2 A; IG = 10 mA;
-
50
A/
s
on-state current after
dI
G/dt = 100 mA/s
triggering
I
GM
Peak gate current
-
1
A
V
GM
Peak gate voltage
-
5
V
RGM
Peak reverse gate voltage
-
5
V
P
GM
Peak gate power
-
2
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.1
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
ak
g
32 1
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
s.
September 2001
1
Rev 1.500
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