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参数资料
| 型号： | 933567120112 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC, SPT, SC-43, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 47K |
| 代理商： | 933567120112 |
1999 Apr 23
3
Philips Semiconductors
Product specication
PNP Darlington transistor
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 30 V
100 nA
IEBO
emitter cut-off current
IC = 0; VEB = 10 V
100 nA
hFE
DC current gain
IC = 20 mA; VCE = 2 V; see Fig.2
30000
VCEsat
collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA
1V
VBEsat
base-emitter saturation voltage
IC = 100 mA; IB = 0.1 mA
1.5
V
VBEon
base-emitter on-state voltage
IC = 10 mA; VCE = 5V
1.4
V
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 100 MHz
220
MHz
handbook, full pagewidth
0
100000
20000
40000
60000
80000
hFE
MGD836
1
10
IC (mA)
102
103
Fig.2 DC current gain; typical values.
VCE = 2V.
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