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参数资料
| 型号： | 933665440127 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | PLASTIC, SC-46, 3 PIN |
| 文件页数： | 1/9页 |
| 文件大小： | 97K |
| 代理商： | 933665440127 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF630, IRF630S
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
Low on-state resistance
V
DSS = 200 V
Fast switching
Low thermal resistance
I
D = 9 A
R
DS(ON) ≤ 400 m
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line
switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits
and general purpose switching applications.
The IRF630 is supplied in the SOT78 (TO220AB) conventional leaded package
The IRF630S is supplied in the SOT404 (D
2PAK) surface mounting package
PINNING
SOT78 (TO220AB)
SOT404 (D
2PAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 175C
-
200
V
DGR
Drain-gate voltage
T
j = 25 C to 175C; RGS = 20 k
-
200
V
GS
Gate-source voltage
-
± 20
V
I
D
Continuous drain current
T
mb =
25 C; V
GS = 10 V
-
9
A
T
mb = 100 C; VGS = 10 V
-
6.3
A
I
DM
Pulsed drain current
T
mb = 25 C
-
36
A
P
D
Total power dissipation
T
mb = 25 C
-
88
W
T
j, Tstg
Operating junction and
- 55
175
C
storage temperature
d
g
s
13
tab
2
12 3
tab
1 It is not possible to make connection to pin:2 of the SOT404 package
August 1999
1
Rev 1.100
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