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参数资料
| 型号： | 933709020127 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC, SC-46, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 46K |
| 代理商： | 933709020127 |
Philips Semiconductors
Product specification
Dual rectifier diodes
BYV34 series
ultrafast
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 300 V/ 400 V/ 500 V
Fast switching
Soft recovery characteristic
V
F ≤ 1.05 V
High thermal cycling performance
Low thermal resistance
I
O(AV) = 20 A
t
rr ≤ 60 ns
GENERAL DESCRIPTION
PINNING
SOT78 (TO220AB)
Dual, common cathode, ultra-fast,
PIN
DESCRIPTION
epitaxial rectifier diodes intended
for use as output rectifiers in high
1
anode 1
frequency switched mode power
supplies.
2
cathode
The BYV34 series is supplied in the
3
anode 2
conventional
leaded
SOT78
(TO220AB) package.
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV34
-300
-400
-500
V
RRM
Peak repetitive reverse voltage
-
300
400
500
V
RWM
Crest working reverse voltage
-
300
400
500
V
R
Continuous reverse voltage
T
mb ≤ 138C
-
300
400
500
V
I
O(AV)
Average rectified output current square wave;
δ = 0.5;
-
20
A
(both diodes conducting)
1
T
mb ≤ 115 C
I
FRM
Repetitive peak forward current t = 25
s; δ = 0.5;
-
20
A
per diode
T
mb ≤ 115 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
120
A
current per diode.
t = 8.3 ms
-
132
A
sinusoidal; with reapplied
V
RRM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
per diode
-
2.4
K/W
heatsink
both diodes conducting
-
1.6
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
60
-
K/W
ambient
k
a1
a2
13
2
12 3
tab
1 Neglecting switching and reverse current losses
October 1998
1
Rev 1.400
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