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参数资料
| 型号： | 933789450127 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 晶闸管 |
| 英文描述： | 9 A, 800 V, SCR |
| 文件页数： | 1/8页 |
| 文件大小： | 71K |
| 代理商： | 933789450127 |
Philips Semiconductors
Product specification
Thyristors
BT151F series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated thyristors in a full pack,
SYMBOL
PARAMETER
MAX.
MAX. UNIT
plastic envelope, intended for use in
applications
requiring
high
BT151F-
500
650
800
bidirectional
blocking
voltage
V
DRM,
Repetitive peak off-state
500
650
800
V
capability and high thermal cycling
V
RRM
voltages
performance.
Typical
applications
I
T(AV)
Average on-state current
5.7
A
include motor control, industrial and
I
T(RMS)
RMS on-state current
9
A
domestic lighting, heating and static
I
TSM
Non-repetitive peak on-state
100
A
switching.
current
PINNING - SOT186
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
3
gate
case
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-650
-800
V
DRM, VRRM
Repetitive peak off-state
-
500
1
650
1
800
V
voltages
I
T(AV)
Average on-state current
half sine wave; T
hs ≤ 87 C
-
5.7
A
I
T(RMS)
RMS on-state current
all conduction angles
-
9
A
I
TSM
Non-repetitive peak
half sine wave; T
j = 125 C prior
on-state current
to surge; with reapplied V
DRM(max)
t = 10 ms
-
100
A
t = 8.3 ms
-
110
A
I
2tI2t for fusing
t = 10 ms
-
50
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 20 A; IG = 50 mA;
-
50
A/
s
on-state current after
dI
G/dt = 50 mA/s
triggering
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
RGM
Peak reverse gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
ak
g
12 3
case
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
s.
June 1999
1
Rev 1.200
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