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参数资料
| 型号： | 933912910215 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封装： | SMD, SST3, 3 PIN |
| 文件页数： | 6/12页 |
| 文件大小： | 100K |
| 代理商： | 933912910215 |
1996 Jul 29
3
Philips Semiconductors
Product specication
N-channel silicon junction
eld-effect transistors
BF545A; BF545B; BF545C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
±30
V
VGSO
gate-source voltage
open drain
30
V
VGDO
gate-drain voltage (DC)
open source
30
V
IG
forward gate current (DC)
10
mA
Ptot
total power dissipation
up to Tamb =25 °C; note 1
250
mW
Tstg
storage temperature
65
150
°C
Tj
operating junction temperature
150
°C
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
400
300
100
0
200
150
MBB688
Ptot
(mW)
Tamb (°C)
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