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参数资料
| 型号： | 934055648127 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 1/10页 |
| 文件大小： | 87K |
| 代理商： | 934055648127 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9514-55
Logic level FET
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode logic
SYMBOL
PARAMETER
MAX.
UNIT
level field-effect power transistor in a
plastic
envelope
using
’trench’V
DS
Drain-source voltage
55
V
technology. The device features very
I
D
Drain current (DC)
68
A
low on-state resistance and has
P
tot
Total power dissipation
142
W
integral zener diodes giving ESD
T
j
Junction temperature
175
C
protection up to 2kV. It is intended for
R
DS(ON)
Drain-source on-state
14
m
use in
automotive and general
resistance
V
GS = 5 V
purpose switching applications.
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
55
V
DGR
Drain-gate voltage
R
GS = 20 k
-55
V
±V
GS
Gate-source voltage
-
10
V
I
D
Drain current (DC)
T
mb = 25 C
-
68
A
I
D
Drain current (DC)
T
mb = 100 C
-
48
A
I
DM
Drain current (pulse peak value)
T
mb = 25 C
-
240
A
P
tot
Total power dissipation
T
mb = 25 C
-
142
W
T
stg, Tj
Storage & operating temperature
-
- 55
175
C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model
-
2
kV
voltage
(100 pF, 1.5 k
)
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
1.05
K/W
mounting base
R
th j-a
Thermal resistance junction to
in free air
60
-
K/W
ambient
d
g
s
12 3
tab
April 1998
1
Rev 1.000
相关PDF资料 |
PDF描述 |
|---|---|
| 934055649118 | 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 05W7 | Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:11; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:18-11 |
| 934055651127 | 63 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 934055650118 | 63 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 934055652127 | 63 A, 100 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 934055762127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220AB Tube |
| 934055788118 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R |
| 934056255127 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 54A 3-Pin(3+Tab) TO-220AB Tube |
| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
| 934056954118 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R |
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