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参数资料
| 型号： | 934056256127 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | PLASTIC, SC-46, 3 PIN |
| 文件页数： | 8/15页 |
| 文件大小： | 306K |
| 代理商： | 934056256127 |
Philips Semiconductors
BUK9528-55A; BUK9628-55A
TrenchMOS logic level FET
Product specication
Rev. 01 — 18 January 2001
2 of 15
9397 750 07683
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
55
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
42
A
Ptot
total power dissipation
Tmb =25 °C
99
W
Tj
junction temperature
175
°C
RDSon
drain-source on-state resistance
VGS =5V; ID = 15 A; Tj =25 °C24
28
m
VGS = 4.5 V; ID = 15 A; Tj =25 °C
30
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
55
V
VDGR
drain-gate voltage (DC)
RGS =20k
55
V
VGS
gate-source voltage (DC)
±10
V
VGSM
non-repetitive gate-source voltage
tp ≤ 50 s
±15
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V;
42
A
30
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
168
A
Ptot
total power dissipation
99
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb =25 °C
42
A
IDRM
pulsed reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
168
A
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
unclamped inductive load; ID =34A;
VDS ≤ 55 V; VGS =5V; RGS =50 ;
starting Tmb =25 °C
57.8
mJ
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