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参数资料
| 型号： | 934056257127 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | 42 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | PLASTIC, SC-46, 3 PIN |
| 文件页数： | 4/9页 |
| 文件大小： | 96K |
| 代理商： | 934056257127 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK7528-55A
Standard level FET
BUK7628-55A
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
Fig.7. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(VGS); conditions ID = 25 A;
Fig.8. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.9. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 25 V
Fig.10. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V
0
10
20
30
40
50
60
70
80
90
100
02468
10
VDS / V
ID / A
7.5
8.0
6.5
6.0
4.5
5.5
7.0
5.0
8.5
9.0
9.5
18.0
16.0
12.0
11.5
10.5
10.0
11.0
VGS / V =
0
10
20
30
40
50
60
70
80
90
100
02468
10
12
VGS/V
ID / A
175
25
Tj / C =
20
25
30
35
40
45
50
55
60
65
70
0
102030405060708090
ID / A
6.0
10.0
9.0
8.0
7.0
6.5
RDS(ON) / mOhm
VGS / V =
0
2
4
6
8
10
12
14
16
0
1020
30405060
7080
ID / A
gfs / S
10
15
20
25
30
35
40
45
50
55
6
8
10
12
14
16
18
20
VGS / V
RDS(ON) / mOhm
-100
-50
0
50
100
150
200
0.5
1
1.5
2
2.5
Tmb / degC
Rds(on) normlised to 25degC
June 2000
4
Rev 1.100
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