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参数资料
| 型号： | 934056266118 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | PLASTIC, SMD, D2PAK-3 |
| 文件页数： | 13/15页 |
| 文件大小： | 306K |
| 代理商： | 934056266118 |
Philips Semiconductors
BUK9528-55A; BUK9628-55A
TrenchMOS logic level FET
Product specication
Rev. 01 — 18 January 2001
7 of 15
9397 750 07683
Philips Electronics N.V. 2001. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =VGS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C; VDS =25V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
180
max
typ
min
V
GS(th)
T
j
(
o
C)
(V)
03aa36
0
0.5
1
1.5
2
2.5
3
max
typ
min
I
D
V
GS
(V)
10-6
10-5
10-4
10-3
10-2
10-1
(A)
03na85
0
5
10
15
20
25
30
35
0
2040
6080
ID (A)
gfs
(S)
03na88
0
500
1000
1500
2000
2500
3000
3500
10-2
10-1
1
10
102
VDS (V)
C (pF)
Ciss
Coss
Crss
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