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参数资料
| 型号： | 934056268118 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | 42 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | PLASTIC, D2PAK-3 |
| 文件页数： | 2/9页 |
| 文件大小： | 96K |
| 代理商： | 934056268118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK7528-55A
Standard level FET
BUK7628-55A
STATIC CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
55
-
V
voltage
T
j = -55C
50
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
2
3
4
V
T
j = 175C
1
-
V
T
j = -55C
-
4.4
V
I
DSS
Zero gate voltage drain current
V
DS = 55 V; VGS = 0 V;
-
0.05
10
A
T
j = 175C
-
500
A
I
GSS
Gate source leakage current
V
GS = ±20 V; VDS = 0 V
-
2
100
nA
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 25 A
-
23.8
28
m
resistance
T
j = 175C
-
56
m
DYNAMIC CHARACTERISTICS
T
mb = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
874
1165
pF
C
oss
Output capacitance
-
218
261
pF
C
rss
Feedback capacitance
-
137
188
pF
t
d on
Turn-on delay time
V
DD = 30 V; Rload =1.2;
-
14
21
ns
t
r
Turn-on rise time
V
GS = 5 V; RG = 10
-
68
102
ns
t
d off
Turn-off delay time
-
83
116
ns
t
f
Turn-off fall time
-
43
60
ns
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
d
Internal drain inductance
Measured from contact screw on
-
3.5
-
nH
tab to centre of die(TO220AB)
L
d
Internal drain inductance
Measured from upper edge of drain
-
2.5
-
nH
tab to centre of die(SOT404)
L
s
Internal source inductance
Measured from source lead to
-
7.5
-
nH
source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
41
A
current
I
DRM
Pulsed reverse drain current
-
163
A
V
SD
Diode forward voltage
I
F = 25 A; VGS = 0 V
-
0.85
1.2
V
I
F = 41 A; VGS = 0 V
-
1.1
-
V
t
rr
Reverse recovery time
I
F = 20 A; -dIF/dt = 100 A/s;
-
4550ns
Q
rr
Reverse recovery charge
V
GS = -10 V; VR = 30 V
-
88
96
nC
June 2000
2
Rev 1.100
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