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参数资料
| 型号： | 934056639112 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CERAMIC PACKGE-2 |
| 文件页数： | 6/12页 |
| 文件大小： | 105K |
| 代理商： | 934056639112 |
2003 Feb 24
3
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF2022-30
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Notes
1. Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th =25 °C; Rth j-c = 1.85 K/W; unless otherwise specied.
Ruggedness in class-AB operation
The BLF2022-30 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: VDS = 28 V; IDQ = 240 mA; PL = 30 W; f = 2170 MHz.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDS
drain-source voltage
65
V
VGS
gate-source voltage
±15
V
ID
DC drain current
4.5
A
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-h
thermal resistance from junction to heatsink Th =25 °C; note 1
1.85
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 0.7 mA
65
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID =70mA
4.5
5.5
V
IDSS
drain-source leakage current
VGS = 0; VDS =28V
5
A
IDSX
on-state drain current
VGS =VGSth +9V; VDS =10V
9
A
IGSS
gate leakage current
VGS = ±15 V; VDS =0
11
nA
gfs
forward transconductance
VDS = 10 V; ID = 2.5 A
2
S
RDSon
drain-source on-state resistance
VGS =VGSth +9V; ID = 2.5 A
0.3
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
1.7
pF
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
2-tone, class-AB
f1 = 2170; f2 = 2170.1
28
240
30 (PEP)
>11
>30
≤25
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