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参数资料
| 型号： | 934056646127 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | 73 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | PLASTIC, SC-46, 3 PIN |
| 文件页数： | 7/13页 |
| 文件大小： | 260K |
| 代理商： | 934056646127 |
Philips Semiconductors
PHP73N06T; PHB73N06T
TrenchMOS standard level FET
Product data
Rev. 02 — 5 July 2002
3 of 13
9397 750 09938
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
VGS ≥ 5V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
Tmb =25 °C; IDM is single pulse; VGS = 10V
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
Tmb (°C)
Pder
(%)
03aa24
0
40
80
120
0
50
100
150
200
Tmb (°C)
Ider
(%)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
003aaa083
1
10
102
103
1
10
102
VDS (V)
ID
(A)
DC
100 ms
Limit RDSon = VDS / ID
10 ms
tp = 10 s
1 ms
100
s
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