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参数资料
| 型号： | 935268676115 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 锁存器 |
| 英文描述： | LVC/LCX/Z SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, INVERTED OUTPUT, PDSO5 |
| 封装： | PLASTIC, SOT-353, 5 PIN |
| 文件页数： | 13/16页 |
| 文件大小： | 70K |
| 代理商： | 935268676115 |
2001 Apr 04
6
Philips Semiconductors
Product specication
Single D-type ip-op; positive-edge trigger
74LVC1G80
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. When VCC is powered-down to 0 V, the output voltage can be 5.5 V in normal operation.
3. Above 55
°C the value of PD derates linearly with 2.5 mW/K.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
1.65
5.5
V
VI
input voltage
0
5.5
V
VO
output voltage
active mode
0
VCC
V
Power-down mode; VCC = 0 V
0
5.5
V
Tamb
operating ambient temperature
40
+85
°C
tr, tf
input rise and fall times
VCC = 1.65 to 2.7 V
0
20
ns/V
VCC = 2.7 to 5.5 V
0
10
ns/V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
0.5
+6.5
V
IIK
input diode current
VI <0
50
mA
VI
input voltage
note 1
0.5
+6.5
V
IOK
output diode current
VO >VCC or VO <0
±50
mA
VO
output voltage
active mode; notes 1 and 2
0.5
VCC + 0.5 V
Power-down mode; notes 1 and 2
0.5
+6.5
V
IO
output diode current
VO =0toVCC
±50
mA
ICC, IGND
VCC or GND current
±100
mA
Tstg
storage temperature
65
+150
°C
PD
power dissipation per package
for temperature range from
40 to +85 °C; note 3
200
mW
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